The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an increase in the carrier concentration in the active region of the proposed LD. The radiative recombination rate is improved by 74% in the proposed LD. The current density is reduced from 21 kA/cm² (reference LD) to 6.13 kA/cm² (proposed LD). The proposed LD has a 71% higher internal quantum efficiency than the reference LD. Using SiLENSe™ 6.3, we analyzed both structures numerically.

通过在 p 掺杂电子阻挡层之间提出四元层 AlGaInN，提高了在 260 和 279 nm 之间的波长范围内发射的深紫外 (DUV) AlGaN 基激光二极管 (LD) 的内量子效率 (IQE) （EBL）和p掺杂波导。这导致所提出的 LD 的有源区中的载流子浓度增加。提出的 LD 中的辐射复合率提高了 74%。电流密度从 21 kA/cm ²（参考 LD）降低到 6.13 kA/cm ²（建议 LD）。所提出的 LD 具有比参考 LD 高 71% 的内部量子效率。使用 SiLENSe™ 6.3，我们对这两种结构进行了数值分析。