氧间隙缺陷在原子层沉积 InGaZnO 薄膜中的作用与控制亚微米沟道长度器件的阳离子成分和栅叠层工艺,ACS Applied Materials & Interfaces

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氧间隙缺陷在原子层沉积 InGaZnO 薄膜中的作用与控制亚微米沟道长度器件的阳离子成分和栅叠层工艺
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-07-02 , DOI: 10.1021/acsami.2c07258
Soo-Hyun Bae ₁ , Jong-Heon Yang ₂ , Yong-Hae Kim ₂ , Young Ha Kwon ₃ , Nak-Jin Seong ₃ , Kyu-Jeong Choi ₃ , Chi-Sun Hwang ₂ , Sung-Min Yoon ₁

Affiliation

通过控制阳离子成分和栅堆叠工艺条件，研究了原子层沉积制备的 In-Ga-Zn-O (IGZO) 薄膜中氧间隙缺陷的作用。从光谱椭偏仪分析发现，过量氧随着IGZO通道内In含量的增加而增加。虽然使用 In/Ga 比为 0.2 的 IGZO 通道的器件在栅堆叠形成过程中与氧化剂类型的变化没有显着差异，但随着 In/Ga 比增加到 1.4，器件特性严重恶化，当用 H ₂ O 氧化剂 (H ₂ O–Al ₂ O ) 制备 Al ₂ O ₃栅极绝缘体 (GI) 时₃）由于通道中的过量氧气量较高。此外，在替代铟锡氧化物 (ITO) GE 的 Al 掺杂 ZnO (AZO) 栅电极 (GE) 的沉积过程中，180 °C 的热退火效应促进了氧空位的钝化和强化金属-氧键合，可以稳定TFT操作。_{根据这些结果，建议采用 O 3}处理的Al ₂ O ₃ GI (O _3– Al ₂ O ₃ ) 和 AZO GE (OA)的栅堆叠结构最适合使用具有更高 In 的 IGZO 通道的器件。内容。另一方面，采用 H ₂ O–Al ₂ O的器件₃ GI 和 AZO GE在正偏压温度应力 (PBTS) 条件下表现出比采用 O _3– Al ₂ O _{3 GI 和 ITO GE 的器件更大的阈值电压 (}V _TH ) 负偏移，因为栅极内的氢含量更大堆栈。V _TH的异常负移随着 IGZO 通道中 In 含量的增加而加速。当制造的器件的沟道长度缩小到亚微米级时，OA 栅叠层成功地减轻了短沟道效应。

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Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.2 did not show marked differences with the variations in the oxidant types during the gate-stack formation, the device characteristics were severely deteriorated with increasing the In/Ga ratio to 1.4, when the Al₂O₃ gate insulator (GI) was prepared with the H₂O oxidants (H₂O–Al₂O₃) due to a higher amount of excess oxygen in the channel. Additionally, during the deposition process of the Al-doped ZnO (AZO) gate electrode (GE) replacing from the indium–tin oxide (ITO) GE, the thermal annealing effect at 180 °C facilitated the passivation of oxygen vacancy and the strengthening of metal–oxygen bonding, which could stabilize the TFT operations. From these results, the gate-stack structure employing O₃-processed Al₂O₃ GI (O_3–Al₂O₃) and AZO GE (OA) was suggested to be most suitable for the device using IGZO channel with a higher In content. On the other hand, the device employing H₂O–Al₂O₃ GI and AZO GE exhibited larger negative shifts of threshold voltage (V_TH) under positive-bias-temperature stress (PBTS) condition than the device employing O_3– Al₂O₃ GI and ITO GE due to larger hydrogen contents within the gate stacks. Anomalous negative shifts of V_TH were accelerated with increasing the In contents of the IGZO channel. When the channel length of the fabricated device were scaled down to submicrometer regime, the OA gate stacks successfully alleviated the short-channel effects.

更新日期：2022-07-02

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