热应力辅助退火提高硅上外延 YSZ 缓冲层的结晶质量,Journal of Materials Chemistry C

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热应力辅助退火提高硅上外延 YSZ 缓冲层的结晶质量
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2022-06-29 , DOI: 10.1039/d2tc01665f
Hyung-Jin Choi ₁ , Jinhyuk Jang ₂ , Soo Young Jung _{1,

3} , Ruiguang Ning _{1,

4} , Min-Seok Kim _{1,

5} , Sung-Jin Jung ₁ , Jun Young Lee ₁ , Jin Soo Park _{6,

7} , Byung Chul Lee _{6,

8,

9} , Ji-Soo Jang ₁ , Seong Keun Kim _{1,

10} , Kyu Hyoung Lee _{11,

12} , June Hyuk Lee ₁₃ , Sung Ok Won ₁₄ , Yulan Li ₁₅ , Shenyang Hu ₁₅ , Si-Young Choi ₂ , Seung-Hyub Baek _{1,

4,

11,

12}

Affiliation

Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, South Korea
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
Department of Materials Science and Engineering, Seoul National University (SNU), Seoul 08826, Republic of Korea
Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, South Korea
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
Bionics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Department of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
Division of Bio-Medical Science & Technology, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul, 02447, Republic of Korea
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, South Korea
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
Yonsei-KIST Convergence Research Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon, 34057, Republic of Korea
Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
Pacific Northwest National Laboratory, 902 Battelle Blvd., Richland, WA 99354, USA

氧化钇稳定氧化锆 (YSZ) 是一种出色的缓冲层，可通过脉冲激光沉积 (PLD) 和溅射等低成本沉积技术在硅上外延生长，以实现新型电子器件，其中各种外延功能氧化物集成在 Si 上。然而，Si上生长的YSZ的结晶质量比通过分子束外延（MBE）生长的SrTiO _{3缓冲层的结晶质量差。}在这里，我们报告了一种简单的退火技术，用于在 Si 衬底上实现高质量的单晶氧化物。我们通过 YSZ 的热膨胀系数（~9 × 10 ^-6 K ^-1) 和Si (∼3 × 10 ^-6 K ^-1 )，它作为缺陷湮灭的额外能源。快速加热速率（~110 °C s ^-1）允许该应变能在退火温度下最大限度地积聚在 YSZ 层中，并且在退火过程中缺陷被有效地消除。我们进一步展示了高质量外延 CeO ₂和正交或四方 Y:HfO _2的集成通过热应力辅助退火方法在 YSZ/Si 衬底上制备薄膜。我们的研究结果不仅为控制热应力以设计外延异质结构提供了见解，而且还为在 Si 上集成高质量复合氧化物以实现新型电子产品的商业化提供了机会。

"点击查看英文标题和摘要"

Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si

Yttria-stabilised zirconia (YSZ) is an excellent buffer layer that can be epitaxially grown on Si through low-cost deposition techniques, such as pulsed laser deposition (PLD) and sputtering, for the realisation of novel electronics, where a variety of epitaxial functional oxides are integrated on Si. However, the crystalline quality of the as-grown YSZ on Si is poorer than that of the SrTiO₃ buffer layer grown by molecular beam epitaxy (MBE). Here, we report a simple annealing technique for achieving high-quality single-crystal oxides on a Si substrate. We significantly improved the crystalline quality of YSZ/Si through the mechanical strain energy arising naturally from the large difference between the thermal expansion coefficients of YSZ (∼9 × 10⁻⁶ K⁻¹) and Si (∼3 × 10⁻⁶ K⁻¹), which acts as an extra energy source for defect annihilation. A rapid heating rate (∼110 °C s⁻¹) allows this strain energy to maximally build up in the YSZ layer at the annealing temperature, and the defects are effectively annihilated during annealing. We further demonstrate the integration of high-quality epitaxial CeO₂ and orthorhombic or tetragonal Y:HfO₂ thin films on YSZ/Si substrates through the thermal stress-assisted annealing method. Our results not only provide insights into the manipulation of thermal stresses to engineer epitaxial heterostructures but also provide opportunities to integrate high-quality complex oxides on Si for the commercialisation of novel electronics.

更新日期：2022-06-29

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