Tunable Volatile to Non-Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing,Advanced Materials Interfaces

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Tunable Volatile to Non-Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2022-06-26 , DOI: 10.1002/admi.202201005
Zonglin Lv ₁ , Hongwei Wang ₁ , Jinpeng Cao ₁ , Chao Zhang ₁ , Gaolei Zhao ₂ , Richeng Yu ₃ , Bo Zhang ₁ , Xiaoguang Xu ₁ , Yong Jiang ₁ , Jun Miao ₁

Affiliation

A direct coupling of antiferroelectric (AFE) and resistive switching (RS) is realized for the first time in an oxide heterostructures (non-tunneling mechanisms). This allows the resistance of the heterostructure to switch between volatile and non-volatile RS behavior, which indicates a threshold RS and broadly increases its practical applicability. The stacks of Pt/PbZrO₃ (PZO)/LaNiO₃/SrTiO₃ (STO) is fabricated by laser pulse deposition. It exhibits a tunable RS behavior from volatile to nonvolatile through adjusting voltage amplitude. Moreover, a high ON/OFF ratio, good retention, and endurance characteristics are achieved. Furthermore, synaptic behaviors related to neural learning functions in PZO film is explored, that is, long-term potential/depression, spike timing dependent plasticity, and paired pulse facilitation. This work provides a way to engineer AFE and RS pertinent functionality for the low-energy-consumption, non-volatile neural computing.

中文翻译：

用于神经形态计算的 PbZrO3 反铁电薄膜中的可调易失性到非易失性电阻转换

反铁电体 (AFE) 和电阻开关 (RS) 的直接耦合首次在氧化物异质结构中实现（非隧道机制）。这允许异质结构的电阻在易失性和非易失性 RS 行为之间切换，这表明阈值 RS 并广泛增加了其实际适用性。Pt/PbZrO ₃ (PZO)/LaNiO ₃ /SrTiO _3的叠层(STO) 是通过激光脉冲沉积制造的。通过调整电压幅度，它表现出从易失性到非易失性的可调 RS 行为。此外，还实现了高开/关比、良好的保持力和耐久性特性。此外，还探讨了与 PZO 膜中神经学习功能相关的突触行为，即长期电位/抑制、尖峰时间依赖性可塑性和成对脉冲促进。这项工作提供了一种为低能耗、非易失性神经计算设计 AFE 和 RS 相关功能的方法。

更新日期：2022-06-26

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