Self-Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation,Advanced Electronic Materials

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Self-Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-06-23 , DOI: 10.1002/aelm.202200280
Jitong Zhou ₁ , Wengao Pan ₁ , Dawei Zheng ₁ , Fayang Liu ₁ , Guijun Li ₂ , Xianda Zhou ₃ , Kai Wang ₃ , Shengdong Zhang ₁ , Lei Lu ₁

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The low-temperature-processed amorphous oxide semiconductors (AOSs) exhibit remarkable potentials in large-area, flexible, and hybrid-integrated electronics, while the performance and stability of AOS devices highly depend on the proper manipulation of abundant native defects in AOS, especially for AOS Schottky barrier diode (SBD) with the naturally defective metal–semiconductor interface. Here, a hydrogenated-InGaZnO SBD with a hydrogen-rich passivation layer (PL) is reported. With the hydrogenation effectively suppressing interface defects and meanwhile donating electrons, a near-ideal Schottky contact and more-conductive drift region are simultaneously achieved, as proven by the perfect ideality factor of 1.08, a Schottky barrier height of 0.87 eV, a high rectification ratio ≈4.5 × 10⁸. Moreover, such sophisticated hydrogenation is self-stabilized by the bilayer structure of PL, contributing to the record-high stabilities under harsh environmental and electrical stresses.

中文翻译：

具有双层钝化的非晶 InGaZnO 肖特基二极管的自稳定氢化

低温处理的非晶氧化物半导体 (AOS) 在大面积、柔性和混合集成电子产品中表现出显着的潜力，而 AOS 器件的性能和稳定性高度依赖于对 AOS 中丰富的天然缺陷的适当处理，特别是用于具有自然缺陷金属-半导体界面的 AOS 肖特基势垒二极管 (SBD)。本文报道了一种具有富氢钝化层 (PL) 的氢化 InGaZnO SBD。通过氢化有效地抑制界面缺陷并同时提供电子，同时实现了接近理想的肖特基接触和更导电的漂移区，完美的理想因子为 1.08，肖特基势垒高度为 0.87 eV，整流比高≈ 4.5 × 10 ⁸ . 此外，这种复杂的加氢反应通过 PL 的双层结构实现自稳定，有助于在恶劣的环境和电应力下实现创纪录的稳定性。

更新日期：2022-06-23

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