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Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse
ACS Nano ( IF 15.8 ) Pub Date : 2022-06-22 , DOI: 10.1021/acsnano.2c04271 Yurong Jiang 1 , Linlin Zhang 1 , Rui Wang 1 , Hongzhi Li 1 , Lin Li 1 , Suicai Zhang 1 , Xueping Li 1 , Jian Su 1 , Xiaohui Song 1 , Congxin Xia 1
ACS Nano ( IF 15.8 ) Pub Date : 2022-06-22 , DOI: 10.1021/acsnano.2c04271 Yurong Jiang 1 , Linlin Zhang 1 , Rui Wang 1 , Hongzhi Li 1 , Lin Li 1 , Suicai Zhang 1 , Xueping Li 1 , Jian Su 1 , Xiaohui Song 1 , Congxin Xia 1
Affiliation
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Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.
中文翻译：
集成自整流光电存储器和人工突触的非对称铁电门控二维晶体管
铁电场效应晶体管 (Fe-FET) 是未来信息设备的有前途的候选者。然而，它们存在耐久度低和保留时间短的问题，这阻碍了处理记忆在相同物理过程中的应用。在这里，受铁电邻近效应的启发，我们设计了一种具有不对称铁电栅极的可重构二维 (2D) MoS 2晶体管，具有超过 10 6的编程/擦除比和自整流比的高存储和逻辑能力10 3。有趣的是，在 10 6的大开关比下获得了稳健的电和光循环以及九种不同的光激发电阻状态，具有出色的非易失性特性。同时，记忆的运作模仿了突触响应不同强度和数量的光尖峰的行为。该设计实现了在单个设备中集成强大的处理存储器，展示了非对称铁电栅极在用于逻辑处理和非易失性存储器应用的 Fe-FET 开发中的巨大潜力。
更新日期：2022-06-22
中文翻译：
集成自整流光电存储器和人工突触的非对称铁电门控二维晶体管
铁电场效应晶体管 (Fe-FET) 是未来信息设备的有前途的候选者。然而，它们存在耐久度低和保留时间短的问题，这阻碍了处理记忆在相同物理过程中的应用。在这里，受铁电邻近效应的启发，我们设计了一种具有不对称铁电栅极的可重构二维 (2D) MoS 2晶体管，具有超过 10 6的编程/擦除比和自整流比的高存储和逻辑能力10 3。有趣的是，在 10 6的大开关比下获得了稳健的电和光循环以及九种不同的光激发电阻状态，具有出色的非易失性特性。同时，记忆的运作模仿了突触响应不同强度和数量的光尖峰的行为。该设计实现了在单个设备中集成强大的处理存储器，展示了非对称铁电栅极在用于逻辑处理和非易失性存储器应用的 Fe-FET 开发中的巨大潜力。
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