Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2022-06-18 , DOI: 10.1007/s10854-022-08483-4 J. Bibin , A. G. Kunjomana , M. Teena
The evolution of different morphologies (fibers, whiskers, needles, and spherulites) of antimony selenide (Sb2Se3), devoid of foreign chemical elements, was explored by the physical vapor deposition (PVD) method, employing an indigenously assembled tubular furnace, which showed layer growth mode as per the metallurgical and scanning electron micrographs. Supersaturation for crystallization was optimized by precisely controlling the difference in temperatures of nutrient and growth zones, ΔT = TN − TG, where ΔT = 125 to 350 °C. The strain and dislocation density of the crystals were evaluated from the crystallographic data. Monophase nature has been confirmed by Rietveld refinement analysis of the PXRD findings, using Full Proof software. UV–Vis-NIR and PL spectra of the morphologies revealed band gap, Eg in the range, 1.15–1.18 eV. Among these habits, good-quality whiskers bearing flat faces of appreciable crystallinity, stoichiometry, thermal stability and mechanical strength were produced due to the periodic deposition of atoms associated with the progression of smooth vapor–solid (v–β) interface as evident from PXRD, EDAX, XPS, TGA and microindentation analyses. Hall effect measurements resulted in obtaining appreciable values of electrical parameters, ρ = 145.36 Ω cm and n = 7.39 × 1018 cm−3 for PV applications. Moreover, optical studies justified direct transition with adequate photon absorption which promises the suitability of whiskers as absorbers in the energy conversion process.
中文翻译:
用于调整化学计量 Sb2Se3 结晶习性物理性质的蒸汽生长和过饱和优化
通过物理气相沉积 (PVD) 方法,采用本地组装的管式炉,探索了不含外来化学元素的硒化锑 (Sb 2 Se 3 )的不同形态(纤维、晶须、针状和球晶)的演变,根据冶金和扫描电子显微照片显示层生长模式。通过精确控制营养区和生长区的温差来优化结晶过饱和度,ΔT = T N - T G,其中ΔT = 125 至 350 °C。从晶体学数据评估晶体的应变和位错密度。使用 Full Proof 软件对 PXRD 发现的 Rietveld 细化分析证实了单相性质。形态的 UV-Vis-NIR 和 PL 光谱显示带隙,E g在范围内,1.15-1.18 eV。在这些习惯中,由于原子的周期性沉积与光滑的气固(v - β) 界面,从 PXRD、EDAX、XPS、TGA 和显微压痕分析中可以看出。霍尔效应测量导致获得可观的电气参数值,对于 PV 应用, ρ = 145.36 Ω cm 和n = 7.39 × 10 18 cm -3 。此外,光学研究证明了具有足够光子吸收的直接跃迁是合理的,这保证了晶须在能量转换过程中作为吸收剂的适用性。