Iodine Electrochemistry Dictates Voltage-Induced Halide Segregation Thresholds in Mixed-Halide Perovskite Devices,Advanced Functional Materials

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Iodine Electrochemistry Dictates Voltage-Induced Halide Segregation Thresholds in Mixed-Halide Perovskite Devices
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-06-17 , DOI: 10.1002/adfm.202203432
Zhaojian Xu ₁ , Ross A. Kerner ₂ , Joseph J. Berry _{2,

3,

4} , Barry P. Rand _{1,

5}

Affiliation

Owing to straightforward stoichiometry–bandgap tunability, mixed-halide perovskites are ideal for many optoelectronic devices. However, unwanted halide segregation under operational conditions, including light illumination and voltage bias, restricts practical use. Additionally, the origin of voltage-induced halide segregation is still unclear. Herein, a systematic voltage threshold study in mixed bromide/iodide perovskite devices is performed and leads to observation of three distinct voltage thresholds corresponding to the doping of the hole transport material (0.7 ± 0.1 V), halide segregation (0.95 ± 0.05 V), and degradation (1.15 ± 0.05 V) for an optically stable mixed-halide perovskite composition with a low bromide content (10%). These empirical threshold voltages are minimally affected by composition until very Br-rich compositions, which reveals the dominant role of iodide/triiodide/iodine electrochemistry in voltage-induced Br/I phase separation and transport layer doping reactions in halide perovskite devices.

中文翻译：

碘电化学决定了混合卤化物钙钛矿器件中电压诱导的卤化物偏析阈值

由于直接的化学计量-带隙可调性，混合卤化物钙钛矿是许多光电器件的理想选择。然而，操作条件下不需要的卤化物隔离，包括光照和电压偏压，限制了实际使用。此外，电压诱导卤化物偏析的起源仍不清楚。在此，对混合溴化物/碘化物钙钛矿器件进行了系统的电压阈值研究，并观察到三个不同的电压阈值，对应于空穴传输材料的掺杂 (0.7 ± 0.1 V)、卤化物偏析 (0.95 ± 0.05 V)、对于具有低溴化物含量（10％）的光学稳定的混合卤化物钙钛矿组合物和降解（1.15±0.05 V）。这些经验阈值电压受成分的影响最小，直到非常富含 Br 的成分，

更新日期：2022-06-17

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