We report on the microstructure, dopant-induced changes in the chemical bonding, and electronic structure, chemical valence states of cations in Sn-incorporated gallium oxide (Ga₂O₃). Spectroscopic characterization of Sn-mixed Ga₂O₃ compounds (Ga_2−2xSn_xO₃, 0.00 ≤ x ≤ 0.3, Ga–Sn–O), which were produced by the high-temperature solid-state chemical reaction method, indicates that the Sn-mixing-induced changes in the microstructure and electronic structure are significant. X-ray photoelectron spectroscopic (XPS) analyses, which considered the Ga 2p doublet (Ga 2p_3/2 and Ga 2p_1/2 peaks), indicate that the Ga exists in its highest chemical valence state (Ga³⁺) in all of the samples, irrespective of Sn-content. The evolution of Sn peaks in XPS data indicates progressive increase in the Sn-content in Ga–Sn–O samples as x increases from 0.0 to 0.3. However, while no significant changes are seen in the Ga chemistry, formation of SnO₂ secondary phase was evident, especially with increasing Sn-concentration. The XPS data confirm the Sn⁴⁺ chemical valence state of Sn-ions in all of the Ga–Sn–O samples. The energy-dispersive X-ray spectroscopic (EDS) mapping analyses reveal the localization of SnO₂ secondary phase in the parent matrix of Ga₂O₃. Combined EDS and XPS analyses indicate the secondary phase (SnO₂) formation becomes dominant for higher Sn-content. Corroborated with chemical analyses made by EDS and XPS, the Fourier infrared (FTIR) spectroscopic analyses also reveal the evolution of Sn–O bonds, which is reflected in the shift for the high-frequency stretching and bending of the GaO₄ tetrahedra, which structurally form the β-Ga₂O₃ phase. The detailed analysis of the FTIR data and peak evolution suggests a stronger interaction of Sn with Ga₂O₃ for x ≥ 0.15. A correlation between composition, crystal chemistry, and electronic properties is established in Ga–Sn–O compounds.

_{我们报告了掺锡氧化镓 (Ga 2} O ₃ )中阳离子的微观结构、掺杂剂引起的化学键变化和电子结构、化学价态。_{Sn-混合Ga 2} O ₃化合物（Ga _{2−2 x} Sn _x O ₃ , 0.00 ≤  x ≤ 0.3, Ga-Sn-O）的光谱表征 ，这是通过高温固态化学反应法制备的，表明Sn混合引起的微观结构和电子结构的变化是显着的。X 射线光电子能谱 (XPS) 分析，考虑了 Ga 2p 双峰（Ga 2p _3/2和 Ga 2p _1/2峰），表明Ga在所有样品中都以其最高的化学价态（Ga ³⁺）存在，而与Sn含量无关。XPS 数据中 Sn 峰的演变表明随着x从 0.0 增加到 0.3 ，Ga-Sn-O 样品中的 Sn 含量逐渐增加。然而，虽然在 Ga 化学中没有观察到显着变化，但 SnO ₂第二相的形成是明显的，尤其是随着 Sn 浓度的增加。XPS 数据证实了所有 Ga-Sn-O 样品中 Sn 离子的 Sn ^{4+化学价态。}能量色散 X 射线光谱 (EDS) 映射分析揭示了 SnO _{2二次相在 Ga 2} O ₃母体中的定位. 结合 EDS 和 XPS 分析表明，第二相 (SnO ₂ ) 的形成对于更高的 Sn 含量变得占主导地位。_{由 EDS 和 XPS 进行的化学分析证实，傅里叶红外 (FTIR) 光谱分析还揭示了 Sn-O 键的演变，这反映在 GaO 4}四面体的高频拉伸和弯曲的变化中，其结构形成β -Ga ₂ O ₃相。FTIR 数据和峰演变的详细分析表明 Sn 与 Ga ₂ O ₃对于x的相互作用更强 ≥ 0.15。在 Ga-Sn-O 化合物中建立了成分、晶体化学和电子特性之间的相关性。