By differential thermal analysis (DTA) is was shown that the pseudo-binary system Tb₂O₃–SiO₂ contains intermediate compounds Tb₂SiO₅, Tb₄Si₃O₁₂ and Tb₂Si₂O₇. All three compounds melt congruently, a phase diagram was proposed, and from the latter compound single crystals could be grown for the first time. This was possible from stoichiometric feed rods by the optical floating-zone (OFZ) technique. X-ray powder analysis proved the Pna2₁ phase of the crystals. Melting temperature and heat of fusion were measured by DTA to be 1769^◦C and $\approx 150$ kJ/mol, respectively. The specific heat capacity of Tb₂Si₂O₇ was measured by dynamic DSC to be c_p = 149.4982 + 0.2242 ⋅ T − 7.3913 × 10⁻⁵ ⋅ T² + 558449.3624 ⋅ T⁻².

差热分析（​​DTA）表明，拟二元体系Tb ₂ O ₃ -SiO ₂含有中间化合物Tb ₂ SiO ₅、Tb ₄ Si ₃ O ₁₂和Tb ₂ Si ₂ O ₇。所有三种化合物都一致地熔化，提出了相图，并且第一次可以从后一种化合物中生长出单晶。这可以通过光学浮动区 (OFZ) 技术从化学计量进给棒中实现。X 射线粉末分析证明了Pna 2 ₁晶体的相。DTA 测得的熔化温度和熔化热为 1769 ^° C，$\approx 150$ kJ/mol，分别。_{Tb 2} Si ₂ O ₇的比热容通过动态DSC测量为c _p  = 149.4982 + 0.2242 · T - 7.3913 × 10 ^-5 · T ² + 558449.3624 · T ^-2。