This paper presents for the first time the systematic synthesis of AgInS₂ (AIS) nanocrystals (NCs) with different sizes of 2.6–6.8 nm just by controlling only the reaction temperature. The synthesis of AIS core NCs was carried out in 2 steps: (i) synthesis of Ag₂S NCs and then (ii) partial exchange of Ag⁺ with In³⁺ in the template Ag₂S NCs. For step (i), Ag₂S NCs of different sizes were synthesized by reaction of the Ag and S precursors at different temperatures of 30 °C to 130 °C, for the same reaction time of 30 min. For step (ii), AIS NCs were created by the exchange of Ag⁺ with In³⁺ at 120 °C for 60 min. Finally, GaS _x was shelled on AIS core NCs to produce the AgInS₂/GaS _x core/shell structures. The synthesized AIS/GaS _x NCs demonstrate the clear excitonic absorptions and strong, narrow excitonic luminescence peaking at 530–606 nm depending on the size of AIS core NCs.

中文翻译：

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系统合成不同尺寸的 AgInS2/GaS x 纳米晶体以发射强窄激子发光

本文首次展示了仅通过控制反应温度就可以系统合成 2.6–6.8 nm 不同尺寸的AgInS _{2 (AIS) 纳米晶 (NC)。}AIS 核心 NC 的合成分 2 个步骤进行：(i) Ag ₂ S NC 的合成，然后 (ii)模板 Ag ₂ S NC中 Ag ⁺与 In ^{3+的部分交换。}对于步骤 (i)，通过 Ag 和 S 前体在 30 °C 至 130 °C 的不同温度下反应 30 分钟的相同反应时间，合成不同尺寸的 Ag ₂ S NC。^{对于步骤 (ii)，AIS NC 是通过在 120 °C 下将 Ag +}与 In ³⁺交换60 分钟来创建的。最后，GaS _X 炮击在AIS核心NCs上生产AgInS ₂ /GaS _X 核/壳结构。合成的 AIS/GaS _X 根据 AIS 核心 NC 的大小，NC 表现出清晰的激子吸收和在 530-606 nm 处达到峰值的强而窄的激子发光。