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Synthesis and characterization of SnO2 thin films using metalorganic precursors
Journal of King Saud University-Science ( IF 3.7 ) Pub Date : 2022-05-26 , DOI: 10.1016/j.jksus.2022.102123
Emeka Charles Nwanna , Patrick Ehi Imoisili , Tien-Chien Jen

Tetrakis (dimethylamino) tin(IV) (TDMASn) is a metal organic precursor used for fabricating transparent conducting tin oxide (SnO2) thin films via atomic layer deposition process (ALD). This study reported for the first time, a spin coating fabrication process of transparent conducting SnO2 thin films using TDMASn as the precursor for electrode materials of solar cells substrate. The samples were prepared using sol–gel spin-coating process and annealed at different temperatures to form metastable crystal structured SnO2 thin films. The manufactured thin films consequently underwent X-ray diffraction (XRD), scanning electron microscope (SEM), UV–vis spectroscopy, and resistivity analysis. The XRD analysis certified the films to be of polycrystalline structure, with the SEM results revealing variations in film thicknesses. The UV–vis analysis demonstrated a peak absorption band at 250 nm, while the highest transmittance of 83.2% in the visible range was noticed at the 550 °C sample.



中文翻译:

使用金属有机前体合成和表征 SnO2 薄膜

四(二甲氨基)锡(IV)(TDMASn)是一种金属有机前体,用于通过原子层沉积工艺(ALD)制造透明导电氧化锡(SnO 2)薄膜。本研究首次报道了一种使用TDMASn作为太阳能电池基板电极材料前驱体的透明导电SnO 2薄膜的旋涂制备工艺。样品采用溶胶-凝胶旋涂工艺制备,并在不同温度下退火形成亚稳态晶体结构的 SnO 2薄膜。因此,制造的薄膜经过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、紫外-可见光谱和电阻率分析。XRD 分析证明薄膜具有多晶结构,SEM 结果显示薄膜厚度的变化。UV-vis 分析显示在 250 nm 处有一个峰值吸收带,而在 550 °C 样品处观察到可见光范围内的最高透射率为 83.2%。

更新日期:2022-05-26
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