h-BN电介质双栅多层MoS2场效应晶体管的静电可控沟道厚度和可调谐低频噪声特性,ACS Applied Materials & Interfaces

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h-BN电介质双栅多层MoS2场效应晶体管的静电可控沟道厚度和可调谐低频噪声特性
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-05-26 , DOI: 10.1021/acsami.2c05294
Jimin Park ₁ , Junho Nam ₁ , Jangyup Son _{1,

2} , Won Jun Jung ₁ , Min Park ₁ , Dong Su Lee ₁ , Dae-Young Jeon ₁

Affiliation

二维过渡金属二硫属化物 (TMD) 材料在克服互补金属氧化物半导体行业面临的基本问题方面引起了越来越多的关注。_{MoS 2}等多层 TMD 材料可用于基于晶体管的高性能应用；驱动电流很高，材料可以很好地处理低频 (LF) 噪声。我们使用 h-BN 电介质作为顶栅，二氧化硅作为底栅，制造了双栅多层 MoS _{2晶体管。}我们系统地研究了底部栅极电压 ( V _b ) 控制的电气特性和顶部/底部界面耦合效应。MoS ₂通道的有效厚度(t _{MoS ₂ _eff} ) 受到V _b的良好调制，并且通过负V _b降低t _{MoS ₂ _eff}显着提高了I _on / I _off比。不同偏置条件下耗尽深度变化的数值模拟和解析建模验证了实验结果。我们也是第一个观察到V _b调谐的低频噪声特性的人。在这里，我们讨论V _b-详细影响串联电阻和载流子迁移率。我们的发现极大地加深了对双栅多层 MoS ₂晶体管如何工作的理解，并将促进现实世界中的性能优化。

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Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric

Two-dimensional transition-metal dichalcogenide (TMD) materials have attracted increasing attention in efforts to overcome fundamental issues faced by the complementary metal-oxide-semiconductor industry. Multilayer TMD materials such as MoS₂ can be used for high-performance transistor-based applications; the drive currents are high and the materials handle low-frequency (LF) noise well. We fabricated double-gated multilayer MoS₂ transistors using the h-BN dielectric for the top gate and silicon dioxide for the bottom gate. We systemically investigated the bottom gate voltage (V_b)-controlled electrical characteristics and the top/bottom interface-coupling effects. The effective thickness of the MoS₂ channel (t_{MoS₂_eff}) was well modulated by V_b, and t_{MoS₂_eff} reduction by negative V_b dramatically improved the I_on/I_off ratio. Numerical simulation and analytical modeling with a variation of the depletion depth under different bias conditions verified the experimental results. We were also the first to observe V_b-tuned LF noise characteristics. Here, we discuss the V_b-affected series resistance and carrier mobility in detail. Our findings greatly enhance the understanding of how double-gated multilayer MoS₂ transistors operate and will facilitate performance optimization in the real world.

更新日期：2022-05-26

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