用于半导体制造的硅基电介质的原子层沉积：现状和未来展望,Journal of Vacuum Science & Technology A

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用于半导体制造的硅基电介质的原子层沉积：现状和未来展望
Journal of Vacuum Science & Technology A ( IF 2.4 ) Pub Date : 2019-09-24 , DOI: 10.1116/1.5113631
Rafaiel A. Ovanesyan ₁ , Ekaterina A. Filatova ₂ , Simon D. Elliott ₃ , Dennis M. Hausmann ₄ , David C. Smith ₄ , Sumit Agarwal ₁

Affiliation

下一代半导体器件的制造需要在高纵横比纳米结构上低温（≤400°C）沉积高度保形（>95%）SiO2、SiNx 和 SiC 薄膜。为了实现这些硅基介电薄膜的生长，半导体制造商正在从化学气相沉积过渡到原子层沉积 (ALD)。目前，使用 ALD 沉积的 SiO2 薄膜已被集成到半导体器件制造中。然而，通过 ALD 沉积的 SiNx 薄膜的完全集成仍然存在重大的工艺挑战，并且没有在与半导体器件制造兼容的温度下进行 SiC 的 ALD 的已知工艺。在这篇重点综述中，作者研究了这三种硅基介电薄膜的热辅助 ALD 和等离子体辅助 ALD 的状态。对于 SiO2 ALD，由于沉积高质量薄膜的低温工艺是已知的，因此作者主要关注使用氯硅烷和氨基硅烷前体识别表面反应机制，因为这为 SiNx 和 SiC 这两种材料的 ALD 提供了基础仍然存在重大处理挑战的系统。作者利用对表面反应机制的理解，描述了 SiNx 和 SiC ALD 过程中加工挑战的根本原因，并提出了工艺改进的方法。虽然文献中已经报道了热辅助SiNx ALD工艺和等离子体辅助SiNx ALD工艺，但是基于NH 3 的热ALD工艺需要>500℃的处理温度和大NH 3 剂量。另一方面，当沉积在高深宽比纳米结构上时，等离子体辅助 SiNx ALD 工艺会出现薄膜特性不均匀或保形性低的问题。在 SiNx 部分，作者对当前已知的使用氯硅烷、三甲硅烷基胺和氨基硅烷前体的热辅助和等离子体辅助 SiNx ALD 工艺进行了广泛概述，描述了该工艺的缺点，并回顾了有关前体反应途径的文献。作者以改善薄膜性能和保形性的建议结束了本节。就 SiC 而言，作者首先概述了先前报道的 SiC ALD 工艺的局限性，并强调与 SiO2 和 SiNx 等离子体辅助 ALD 不同，目前尚无明显的低温等离子体辅助生长的直接途径。作者推测，SiC 的低温 ALD 可能需要设计全新的前驱体。最后，他们总结了含碳 SiNx 和 SiO2 薄膜 ALD 方面取得的进展，这可能为半导体制造中的 SiC ALD 带来许多好处。最后，作者希望通过这篇综述，为读者提供有关硅基电介质原子层沉积过程中表面反应机制的全面知识，为未来的前驱体和工艺开发奠定基础。

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Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

The fabrication of next-generation semiconductor devices has created a need for low-temperature (≤400 °C) deposition of highly-conformal (>95%) SiO2, SiNx, and SiC films on high-aspect-ratio nanostructures. To enable the growth of these Si-based dielectric films, semiconductor manufacturers are transitioning from chemical vapor deposition to atomic layer deposition (ALD). Currently, SiO2 films deposited using ALD are already being integrated into semiconductor device manufacturing. However, substantial processing challenges remain for the complete integration of SiNx films deposited by ALD, and there are no known processes for ALD of SiC at temperatures that are compatible with semiconductor device manufacturing. In this focused review, the authors look at the status of thermal and plasma-assisted ALD of these three Si-based dielectric films. For SiO2 ALD, since low-temperature processes that deposit high-quality films are known, the authors focus primarily on the identification of surface reaction mechanisms using chlorosilane and aminosilane precursors, as this provides a foundation for the ALD of SiNx and SiC, two material systems where substantial processing challenges still exist. Using an understanding of the surface reaction mechanisms, the authors describe the underlying reasons for the processing challenges during ALD of SiNx and SiC and suggest methodologies for process improvement. While both thermal and plasma-assisted SiNx ALD processes have been reported in the literature, the thermal NH3-based ALD processes require processing temperatures >500 °C and large NH3 doses. On the other hand, plasma-assisted SiNx ALD processes suffer from nonuniform film properties or low conformality when deposited on high-aspect-ratio nanostructures. In the SiNx section, the authors provide a broad overview of the currently known thermal and plasma-assisted SiNx ALD processes using chlorosilane, trisilylamine, and aminosilane precursors, describe the process shortcomings, and review the literature on precursor reaction pathways. The authors close this section with suggestions for improving the film properties and conformality. In the case of SiC, the authors first outline the limitations of previously reported SiC ALD processes and highlight that unlike SiO2 and SiNx plasma-assisted ALD, no straightforward pathway for low-temperature plasma-assisted growth is currently apparent. The authors speculate that low-temperature ALD of SiC may require the design of completely new precursors. Finally, they summarize the progress made in the ALD of C-containing SiNx and SiO2 films, which may provide many of the benefits of SiC ALD in semiconductor manufacturing. In closing, through this review, the authors hope to provide the readers with a comprehensive knowledge of the surface reactions mechanisms during ALD of Si-based dielectrics, which would provide a foundation for future precursor and process development.

更新日期：2019-09-24

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