Due to the abundance and usefulness of tin oxide for applications such as transparent conductors, sensors, and catalysts, it is desirable to establish high quality atomic layer deposition (ALD) of this material. ALD allows for uniform, conformal coating of complex topographies with ultrathin films and can broaden the applicability of tin oxide to systems such as nanostructured solar cells. The present work examines the ALD of tin oxide by means of the precursor tetrakis(dimethylamino)tin and water as a counter-reactant. Low temperature growth in the range of 30–200 °C on Si(100) and glass substrates is studied. It is found that the growth rate increases with reduced temperature, up to ∼2.0 A/cycle at 30 °C, as compared to 0.70 A/cycle at 150 °C. The ALD process is established to be saturated even at the lowest temperature studied, for which the film contamination levels are below the detection limits of x-ray photoelectron spectroscopy. As-deposited films are smooth (rms roughness of 33 A for a 460 A thic...

中文翻译：

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四（二甲氨基）锡和水的氧化锡原子层沉积

由于氧化锡在透明导体、传感器和催化剂等应用中的丰富性和实用性，因此需要建立这种材料的高质量原子层沉积 (ALD)。ALD 允许用超薄膜对复杂的形貌进行均匀的保形涂层，并可以扩大氧化锡在纳米结构太阳能电池等系统中的适用性。目前的工作通过前体四（二甲氨基）锡和水作为反反应物来检查氧化锡的 ALD。研究了在 Si(100) 和玻璃基板上 30–200 °C 范围内的低温生长。发现随着温度的降低，生长速率增加，在 30 °C 时高达 ~2.0 A/cycle，而在 150 °C 时为 0.70 A/cycle。即使在所研究的最低温度下，ALD 工艺也已饱和，其薄膜污染水平低于 X 射线光电子能谱的检测限。沉积后的薄膜是光滑的（460 A 厚的 rms 粗糙度为 33 A...