We have investigated the chemistry of the iridium precursor ((methylcyclopentadienyl) (1,5-cyclooctadiene))iridium (MeCpIrCOD) and have utilized the precursor for chemical vapor deposition (CVD) of iridium films. The vapor pressure of the precursor is ∼80 and ∼280 mTorr at 80 and 120 °C, respectively. The precursor slowly dimerized at elevated temperatures (>60 °C). Pyrolysis studies revealed that the compound decomposes by breaking the methylcyclopentadienyl–Ir and cyclooctadiene–Ir bonds nearly simultaneously at temperatures above 400 °C. Iridium films grown at substrate temperatures between 250 and 400 °C were characterized by in situ x-ray photoelectron spectroscopy, x-ray diffraction, and scanning electron microscopy. Pure CVD iridium films were obtained on various substrates by codosing MeCpIrCOD with oxygen or hydrogen. Without oxygen, the metal films required higher growth temperatures and contain ∼87% carbon. Oxygen also affected the film deposition rate and lowered growth temperature. X-ray diff...

中文翻译：

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(甲基环戊二烯基) (1,5-环辛二烯)铱的前体化学和薄膜生长

我们研究了铱前体 ((甲基环戊二烯基) (1,5-环辛二烯)) 铱 (MeCpIrCOD) 的化学性质，并利用该前体进行铱薄膜的化学气相沉积 (CVD)。在 80 和 120 °C 下，前体的蒸气压分别为 ∼80 和 ∼280 mTorr。前体在高温 (>60 °C) 下缓慢二聚。热解研究表明，在高于 400 °C 的温度下，该化合物几乎同时通过破坏甲基环戊二烯基-Ir 和环辛二烯-Ir 键而分解。通过原位 X 射线光电子能谱、X 射线衍射和扫描电子显微镜对在 250 至 400 °C 的衬底温度下生长的铱薄膜进行了表征。通过将 MeCpIrCOD 与氧或氢共掺杂，在各种基材上获得纯 CVD 铱膜。没有氧气，金属膜需要更高的生长温度并含有~87%的碳。氧气也影响薄膜沉积速率并降低生长温度。X射线衍射...