超越疏水性：空穴传输材料的 F4-TCNQ 掺杂如何提高介孔三阳离子钙钛矿太阳能电池的稳定性,Journal of Materials Chemistry A

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超越疏水性：空穴传输材料的 F4-TCNQ 掺杂如何提高介孔三阳离子钙钛矿太阳能电池的稳定性
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2022-05-11 , DOI: 10.1039/d2ta02588d
Maning Liu ₁ , Staffan Dahlström ₂ , Christian Ahläng ₂ , Sebastian Wilken ₂ , Aleksandr Degterev ₁ , Anastasia Matuhina ₁ , Mahboubeh Hadadian ₃ , Magnus Markkanen ₄ , Kerttu Aitola ₄ , Aleksi Kamppinen ₅ , Jan Deska ₆ , Oliver Mangs ₂ , Mathias Nyman ₂ , Peter D. Lund ₄ , Jan-Henrik Smått ₃ , Ronald Österbacka ₂ , Paola Vivo ₁

Affiliation

尽管三阳离子钙钛矿太阳能电池（PSC）具有出色的功率转换效率，但其在空气中的长期稳定性低仍然是实际应用的主要瓶颈。传统上用于空穴传输材料 (HTM) 的吸湿性掺杂剂会严重降解钙钛矿薄膜。众所周知的 spiro-OMeTAD HTM 的 p 型 F4-TCNQ 掺杂能够对下面的钙钛矿层进行疏水性诱导保护。然而，F4-TCNQ 掺杂在稳定 PSC 中的机制仍不清楚。在此，当采用 F4-TCNQ 作为 spiro-OMeTAD 的唯一掺杂剂时，开发了高度稳定的介孔三阳离子 PSC，具有非常长的T ₈₀对于存储在空气中（RH ∼ 40%）的设备，使用寿命超过 1 年（∼380 天）。目前对 F4-TCNQ 掺杂的螺-OMeTAD 的综合实验和理论研究表明，钙钛矿层下方的疏水保护并不是提高器件长期稳定性的唯一原因。与传统的吸湿性掺杂剂相比，spiro-OMeTAD 层中 F4-TCNQ 掺杂的高度均匀性以及更少的掺杂剂聚集和掺杂剂向阳极迁移是导致钙钛矿太阳能电池稳定性增加的关键因素。这项工作为未来具有竞争稳定性的 PSC 的 HTM 掺杂工程铺平了道路。

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Beyond hydrophobicity: how F4-TCNQ doping of the hole transport material improves stability of mesoporous triple-cation perovskite solar cells

Despite the outstanding power conversion efficiency of triple-cation perovskite solar cells (PSCs), their low long-term stability in the air is still a major bottleneck for practical applications. The hygroscopic dopants traditionally used in hole transport materials (HTMs) severely degrade the perovskite film. The p-type F4-TCNQ doping of the well-known spiro-OMeTAD HTM enables hydrophobicity-induced protection of the perovskite layer underneath. Nevertheless, the mechanism of F4-TCNQ doping in stabilizing PSCs is still rather unclear. Herein, when F4-TCNQ was adopted as the sole dopant of spiro-OMeTAD, highly stable mesoporous triple-cation PSCs were developed, with a very long T₈₀ lifetime of more than 1 year (∼380 days) for devices stored in air (RH ∼ 40%). The present comprehensive experimental and theoretical studies on F4-TCNQ-doped spiro-OMeTAD reveal that the hydrophobic protection of the perovskite layer underneath is not the only reason for the increased long-term stability of the devices. The high uniformity of F4-TCNQ doping in the spiro-OMeTAD layer and less dopant aggregation and dopant migration towards the anode are key factors responsible for the increased stability of the perovskite solar cells when compared to conventional hygroscopic dopants. This work paves the way for future doping engineering of HTMs for PSCs with competitive stability.

更新日期：2022-05-11

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