Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawide-bandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 ​eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga₂O₃), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.

由于其新颖的物理特性，半导体几乎渗透到了当代工业系统的每一个角落。如今，半导体材料及其微电子和光电器件广泛应用于民用和军用领域。近来，带隙远大于 3.4 eV 的 GaN 的超宽带隙 (UWBG) 半导体，如氮化铝镓 (AlGaN)、氧化镓 (Ga ₂ O ₃) 和金刚石，由于具有高击穿场、高稳定性和高抗辐射等优点而受到越来越多的关注。在这篇综述中，介绍了有关 UWBG 半导体在光电子学和微电子学中的最新研究。此外，还讨论了 UWBG 半导体的挑战和机遇。预计这篇综述将为进一步的相关研究提供启发和见解。