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Cubic Nanogrids for Counterbalance Contradiction among Reorganization Energy, Strain Energy, and Wide Bandgap
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2022-05-09 , DOI: 10.1021/acs.jpclett.2c00827 Yongxia Wang 1 , Mingyang Fu 1 , Xiaofei Zhang 2 , Dong Jin 1 , Shiyuan Zhu 1 , Yucong Wang 1 , Zhenyu Wu 3 , Jianmin Bao 3 , Xiaogang Cheng 4 , Lei Yang 1 , Linghai Xie 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2022-05-09 , DOI: 10.1021/acs.jpclett.2c00827 Yongxia Wang 1 , Mingyang Fu 1 , Xiaofei Zhang 2 , Dong Jin 1 , Shiyuan Zhu 1 , Yucong Wang 1 , Zhenyu Wu 3 , Jianmin Bao 3 , Xiaogang Cheng 4 , Lei Yang 1 , Linghai Xie 1
Affiliation
Molecular cross-scale gridization and polygridization of organic π-backbones make it possible to install 0/1/2/3-dimensional organic wide-bandgap semiconductors (OWBGSs) with potentially ZnO-like fascinating multifunctionality such as optoelectronic and piezoelectronic features. However, gridization effects are limited to uncover, because the establishment of gridochemistry still requires a long time, which offers a chance to understand the effects with a theoretical method, together with data statistics and machine learning. Herein, we demonstrate a state-of-the-art 3D cubic nanogridon with a size of ∼2 × 2 × 1.5 nm3 to examine its multigridization of π-segments on the bandgap, molecular strain energy (MSE), as well as reorganization energy (ROE). A cubic gridon (CG) consists of a four-armed bifluorene skeleton and a thiophene-containing fused arene plane with the Csp3 spiro-linkage, which can be deinstalled into face-on or edge-on monogrids. As a result, multigridization does not significantly reduce bandgaps (Eg ≥ 4.03 eV), while the MSE increases gradually from 4.72 to 23.83 kcal/mol. Very importantly, the ROE of a CG exhibits an extreme reduction down to ∼28 meV (λ+) that is near the thermal fluctuation energy (∼26 meV). Our multigridization results break through the limitation of the basic positively proportional relationship between reorganization energies and bandgaps in organic semiconductors. Furthermore, multigridization makes it possible to keep the ROE small under the condition of a high MSE in OWBGS that will guide the cross-scale design of multifunctional OWBGSs with both inorganics’ optoelectronic performance and organics’ mechanical flexibility.
中文翻译:
立方纳米网格用于平衡重组能、应变能和宽带隙之间的矛盾
有机 π 骨架的分子跨尺度网格化和多网格化使得安装 0/1/2/3 维有机宽带隙半导体 (OWBGS) 成为可能,该半导体具有潜在的 ZnO 样迷人的多功能性,例如光电和压电特性。然而,网格化效应的发现有限,因为网格化学的建立还需要很长时间,这提供了一个机会,可以通过理论方法以及数据统计和机器学习来理解网格化效应。在这里,我们展示了一个最先进的 3D 立方纳米网格,尺寸约为 2 × 2 × 1.5 nm 3检查其在带隙、分子应变能 (MSE) 和重组能 (ROE) 上的 π 段的多重网格化。立方网格 (CG) 由四臂联芴骨架和具有 Csp 3螺键的含噻吩稠合芳烃平面组成,可拆卸成正面或侧面单网格。因此,多重网格化并没有显着降低带隙(E g ≥ 4.03 eV),而 MSE 从 4.72 逐渐增加到 23.83 kcal/mol。非常重要的是,CG 的 ROE 显着降低至 ∼28 meV (λ +)接近热波动能量(~26 meV)。我们的多重网格化结果突破了有机半导体中重组能和带隙之间基本正比例关系的限制。此外,多重网格化可以在 OWBGS 的高 MSE 条件下保持较小的 ROE,这将指导多功能 OWBGS 的跨尺度设计,同时具有无机物的光电性能和有机物的机械灵活性。
更新日期:2022-05-09
中文翻译:
立方纳米网格用于平衡重组能、应变能和宽带隙之间的矛盾
有机 π 骨架的分子跨尺度网格化和多网格化使得安装 0/1/2/3 维有机宽带隙半导体 (OWBGS) 成为可能,该半导体具有潜在的 ZnO 样迷人的多功能性,例如光电和压电特性。然而,网格化效应的发现有限,因为网格化学的建立还需要很长时间,这提供了一个机会,可以通过理论方法以及数据统计和机器学习来理解网格化效应。在这里,我们展示了一个最先进的 3D 立方纳米网格,尺寸约为 2 × 2 × 1.5 nm 3检查其在带隙、分子应变能 (MSE) 和重组能 (ROE) 上的 π 段的多重网格化。立方网格 (CG) 由四臂联芴骨架和具有 Csp 3螺键的含噻吩稠合芳烃平面组成,可拆卸成正面或侧面单网格。因此,多重网格化并没有显着降低带隙(E g ≥ 4.03 eV),而 MSE 从 4.72 逐渐增加到 23.83 kcal/mol。非常重要的是,CG 的 ROE 显着降低至 ∼28 meV (λ +)接近热波动能量(~26 meV)。我们的多重网格化结果突破了有机半导体中重组能和带隙之间基本正比例关系的限制。此外,多重网格化可以在 OWBGS 的高 MSE 条件下保持较小的 ROE,这将指导多功能 OWBGS 的跨尺度设计,同时具有无机物的光电性能和有机物的机械灵活性。