Tungsten-based semiconductor nanomaterials have great potential for developing energy-saving windows as a consequence of excellent shielding performance in the near-infrared (NIR) region. The performance of such nanomaterials is profoundly influenced by the the oxygen vacancies (OVs). However, the relationship between NIR absorption properties and OVs concentration has been rarely explored. In this work, the WO_3-x nanosheets capable of various OVs concentration were successfully synthesized via a simple solvothermal approach, and we have carefully investigated their optical properties. Particularly, we found that the WO_3-x-Pr nanosheets showed the strongest UV and NIR absorption, with the transmittance in visible region is up to 60%. Furthermore, this material is capable of the lowest temperature gap (about 11.4 °C). This work manifests that the optical performance of the tungsten (W)-based semiconductor nanomaterials is highly depended by the OVs concentration.

钨基半导体纳米材料在近红外（NIR）区域具有出色的屏蔽性能，在开发节能窗方面具有巨大潜力。这种纳米材料的性能深受氧空位（OVs）的影响。然而，NIR 吸收特性与 OVs 浓度之间的关系却很少被探索。在这项工作中，通过简单的溶剂热法成功合成了具有各种 OVs 浓度的 WO _3-x纳米片，我们仔细研究了它们的光学性质。特别是，我们发现 WO _3-x-Pr纳米片表现出最强的紫外和近红外吸收，可见光区域的透射率高达60%。此外，这种材料能够达到最低的温差（约 11.4 °C）。这项工作表明钨 (W) 基半导体纳米材料的光学性能高度依赖于 OVs 浓度。