准平面异质结全聚合物太阳能电池：稳定的双重方法,Advanced Functional Materials

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准平面异质结全聚合物太阳能电池：稳定的双重方法
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-05-04 , DOI: 10.1002/adfm.202201828
Congcong Cao ₁ , Hengtao Wang ₁ , Dongsheng Qiu ₁ , Tingxing Zhao ₁ , Yulin Zhu ₁ , Xue Lai ₁ , Mingrui Pu ₁ , Yan Li ₁ , Heng Li ₁ , Hui Chen _{1,

2} , Feng He _{1,

3}

Affiliation

除了效率，稳定性是开发有机太阳能电池的另一个关键因素。准平面异质结 (Q-PHJ) 结构在界面处结合了两个纯层作为主要和微小的纳米级体异质结 (BHJ)，与 BHJ 器件相比，该结构具有出色的器件稳定性。在这项贡献中，聚合物供体 PBQx-H-TF 和配置定义的聚合物受体 PBTIC-γ-TSe 被合成并用于通过正交溶剂制造双层器件，相应的 Q-PHJ 全聚合物太阳能电池（全- PSCs）以高效率提供可靠的稳定性。实现了令人鼓舞的 15.77% 的 PCE，这是具有真实双层结构的 Q-PHJ 全 PSC 中最高的。与 BHJ 设备中 13.91% 的 PCE 相比有重大改进，并且随着 Q-PHJ 全 PSC 中复合的减少，载流子传输性能得到显着改善。得益于双层形态，Q-PHJ 全 PSC 的稳定性比 BHJ 器件的稳定性有了很大提高。与老化的Q-PHJ全PSC相比，老化的BHJ中的电荷复合过程也更为严重。这项工作启发了Q-PHJ在制备高效全PSCs中的应用，同时也为从材料和器件工程方面的双重方法提高器件稳定性提供了指导。与老化的Q-PHJ全PSC相比，老化的BHJ中的电荷复合过程也更为严重。这项工作启发了Q-PHJ在制备高效全PSCs中的应用，同时也为从材料和器件工程方面的双重方法提高器件稳定性提供了指导。与老化的Q-PHJ全PSC相比，老化的BHJ中的电荷复合过程也更为严重。这项工作启发了Q-PHJ在制备高效全PSCs中的应用，同时也为从材料和器件工程方面的双重方法提高器件稳定性提供了指导。

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Quasiplanar Heterojunction All-Polymer Solar Cells: A Dual Approach to Stability

In addition to efficiency, stability is another key factor in developing organic solar cells. The quasiplanar heterojunction (Q-PHJ) structure, combining two pure layers as major and tiny nanoscale bulk heterojunction (BHJ) at interface, demonstrates superior device stability compared with BHJ devices. In this contribution, the polymer donor, PBQx-H-TF, and configurationally defined polymeric acceptor, PBTIC-γ-TSe are synthesized and used to fabricate bilayer devices by orthogonal solvents, the corresponding Q-PHJ all-polymer solar cells (all-PSCs) deliver reliable stability with high efficiency. An encouraging PCE of 15.77% is achieved, which is the highest one among Q-PHJ all-PSCs with real-bilayer structure. There is a major improvement over the 13.91% PCE in the BHJ device, and the carrier transport performance is improved substantially following the reduction of recombination in the Q-PHJ all-PSCs. Benefiting from the bilayer morphology, the stability of Q-PHJ all-PSCs has been greatly enhanced over that of the BHJ devices. The charge recombination process is also more serious in the aging BHJ compared with the aging Q-PHJ all-PSCs. This work inspires the application of Q-PHJ in the preparation of high-efficient all-PSCs, but also provides guidance on the improvement of device stability from a dual approach of material and device engineering aspects.

更新日期：2022-05-04

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