The epitaxial growth of semiconductor materials in nanowire geometries is enabling a new class of compact, micron scale optoelectronic devices. The deterministic selection and integration of single nanowire devices, from large growth populations, is required with high spatial accuracy and yield to enable their integration with on-chip systems. In this review we highlight the main methods by which single nanowires can be transferred from their growth substrate to a target chip. We present a range of chip-scale devices enabled by single NW transfer, including optical sources, receivers and waveguide networks. We discuss the scalability of common integration methods and their compatibility with standard lithographic methods and electronic contacting.

纳米线几何形状的半导体材料的外延生长使新型紧凑型微米级光电器件成为可能。从大量增长的群体中确定性地选择和集成单个纳米线器件需要具有高空间精度和产量，以使其能够与片上系统集成。在这篇综述中，我们重点介绍了将单根纳米线从其生长衬底转移到目标芯片的主要方法。我们展示了一系列通过单 NW 传输实现的芯片级设备，包括光源、接收器和波导网络。我们讨论了常见集成方法的可扩展性及其与标准光刻方法和电子接触的兼容性。