高性能 PEALD-IZO/IGZO 顶栅薄膜晶体管通过调制双通道效应显着提高稳定性,Advanced Materials Interfaces

当前位置： X-MOL 学术 › Adv. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

高性能 PEALD-IZO/IGZO 顶栅薄膜晶体管通过调制双通道效应显着提高稳定性
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2022-04-29 , DOI: 10.1002/admi.202200501
Yoon‐Seo Kim ₁ , Won‐Bum Lee ₁ , Hye‐Jin Oh ₁ , TaeHyun Hong ₁ , Jin‐Seong Park ₁

Affiliation

制造了具有不同 IZO 和 IGZO 层厚度的基于等离子体增强原子层沉积 (PEALD) 的双层 IZO（背沟道）/IGZO 顶栅薄膜晶体管 (TFT)，以评估厚度与引起的电特性/可靠性之间的相关性通过双通道调制。随着 IZO 层厚度的增加，由堆叠在背沟道上的 IZO 形成的双沟道提高了器件的迁移率和可靠性。在 TCAD 模拟中，随着 IZO 厚度的增加，双通道中流过 IZO 通道的电流增加，主通道从 IGZO 到 IZO 的过渡发生在一定的 IZO 层厚度之上。主沟道过渡到 IZO，它具有高迁移率，位于远离栅极绝缘体 (GI) 的背沟道中，V _th ) 偏移和 GI 恶化的可靠性显着提高。因此，基于 PEALD 的 IZO/IGZO TG TFT 在高达 10 800 的正偏压温度应力下表现出高迁移率 ( ≈ 40 cm ² V ^-1 s ^-1 ) 和高稳定性 ( Δ V _th = - 0.07 V) s。这表明通过对堆叠氧化物半导体进行纳米级厚度控制的基于 ALD 的双通道调节可以克服迁移率和可靠性之间的权衡。

"点击查看英文标题和摘要"

Remarkable Stability Improvement with a High-Performance PEALD-IZO/IGZO Top-Gate Thin-Film Transistor via Modulating Dual-Channel Effects

Plasma-enhanced atomic layer deposition (PEALD)-based bilayer IZO (back channel)/IGZO top-gate thin-film transistors (TFTs) with different IZO and IGZO layer thicknesses are fabricated to evaluate the correlation between thickness and electrical characteristics/reliability caused by dual-channel modulation. The dual-channel formed by IZO stacked on the backchannel improves both mobility and reliability of devices as the IZO layer thickness increases. In the TCAD simulation, as the thickness of IZO increases, the current flowing through the IZO channel among the dual channels increases and the main channel transition from IGZO to IZO occurs above a certain IZO layer thickness. The main channel transition to IZO, which has high mobility and is located in the backchannel away from the gate insulator (GI), leads to a mobility increase with a lower threshold voltage (V_th) shift and a remarkable improvement of reliability deteriorated by the GI. As a result, PEALD-based IZO/IGZO TG TFTs exhibit both high mobility (≈40 cm² V⁻¹ s⁻¹) and high stability (ΔV_th = -0.07 V) of a positive bias temperature stress up to 10 800 s. This suggests that ALD-based dual-channel regulation by nanoscale thickness control of the stacking oxide semiconductor can overcome the trade-off between mobility and reliability.

更新日期：2022-04-29

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南