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Impact of bismuth titanate for microwave absorber application: a review
Journal of Sol-Gel Science and Technology ( IF 2.3 ) Pub Date : 2022-04-27 , DOI: 10.1007/s10971-022-05805-0
P. Harshapriya 1 , Deepak Basandrai 1
Affiliation  

Bismuth titanate (BTO) owe to high dielectric constant, high dielectric losses, and high temperature coefficient of resonant frequency is considered to be one of the most prominent aspirants for microwave absorption applications. BTO and their composites are also used to diminish the electromagnetic interference in electrical devices, Airplanes, ships and tank radar signals. Several studies have been reported to enhanced the capability of BTO for microwave absorption applications. In such studies, the ferroelectric and dielectric characteristics of Bi4Ti3O12 are found to be improved by doping it with V, La, Sm, and Nd as compared to other dopants. However, Sm-Ta co doped BTO has shown high remanent polarization (46.2 emu/g) and coercive field (102 Oe). The highest dielectric loss was observed in vanadium doped Bi4Ti3O12 which enable it for high temperature applications.



中文翻译:

钛酸铋对微波吸收器应用的影响:综述

钛酸铋 (BTO) 具有高介电常数、高介电损耗和高谐振频率温度系数,被认为是微波吸收应用中最突出的理想材料之一。BTO 及其复合材料还用于减少电子设备、飞机、船舶和坦克雷达信号中的电磁干扰。据报道,有几项研究提高了 BTO 在微波吸收应用中的能力。在这些研究中,Bi 4 Ti 3 O 12的铁电和介电特性与其他掺杂剂相比,发现通过用 V、La、Sm 和 Nd 掺杂可以改善。然而,Sm-Ta 共掺杂 BTO 显示出高剩余极化 (46.2 emu/g) 和矫顽场 (102 Oe)。在钒掺杂的 Bi 4 Ti 3 O 12中观察到最高的介电损耗,这使其能够用于高温应用。

更新日期:2022-04-28
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