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High-Efficiency and Stable Perovskite Photodetectors with an F4-TCNQ-Modified Interface of NiOx and Perovskite Layers
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2022-04-26 , DOI: 10.1021/acs.jpclett.2c00860
Jia Yang 1 , Yukun Wang 1 , Lixiang Huang 1 , Guoxin Li 1 , Xin Qiu 1 , Xiaoxiao Zhang 1 , Wenhong Sun 1, 2
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2022-04-26 , DOI: 10.1021/acs.jpclett.2c00860
Jia Yang 1 , Yukun Wang 1 , Lixiang Huang 1 , Guoxin Li 1 , Xin Qiu 1 , Xiaoxiao Zhang 1 , Wenhong Sun 1, 2
Affiliation
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Nickel oxide (NiOx), a typical p-type semiconductor, is emerging as the most promising hole transport layer material. However, the inferior interfacial contact of the NiOx/perovskite interface has limited the improvement of the performance of photodetectors (PDs). In this work, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) is introduced to modify the NiOx/perovskite interface to prepare high-performance PDs. This study shows that the F4-TCNQ layer interacts with the NiOx/perovskite layers. It can increase the Ni3+/Ni2+ ratio and then enhance the hole extraction and charge carrier mobility; on the contrary, it can form a new Lewis adduct and passivate the undercoordinated Pb2+ ions. Furthermore, with the F4-TCNQ modification, the perovskite film exhibits good thermal stability and photostability. The PDs demonstrate excellent photoelectric properties and long-term stability in the atmosphere. This finding provides a simple and efficient way to further develop the NiOx/perovskite interface.
中文翻译:
具有 F4-TCNQ 改性 NiOx 和钙钛矿层界面的高效稳定钙钛矿光电探测器
氧化镍(NiO x)是一种典型的 p 型半导体,正在成为最有前途的空穴传输层材料。然而,NiO x /钙钛矿界面较差的界面接触限制了光电探测器(PD)性能的提高。在这项工作中,引入2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷(F4-TCNQ)来修饰NiO x /钙钛矿界面以制备高性能PD。该研究表明 F4-TCNQ 层与 NiO x /钙钛矿层相互作用。它可以增加Ni 3+ /Ni 2+比率,然后提高空穴提取和电荷载流子迁移率;相反,它可以形成新的路易斯加合物,钝化配位不足的Pb 2+离子。此外,通过 F4-TCNQ 改性,钙钛矿薄膜表现出良好的热稳定性和光稳定性。PD在大气中表现出优异的光电性能和长期稳定性。这一发现为进一步开发 NiO x /钙钛矿界面提供了一种简单有效的方法。
更新日期:2022-04-26
中文翻译:
![](https://scdn.x-mol.com/jcss/images/paperTranslation.png)
具有 F4-TCNQ 改性 NiOx 和钙钛矿层界面的高效稳定钙钛矿光电探测器
氧化镍(NiO x)是一种典型的 p 型半导体,正在成为最有前途的空穴传输层材料。然而,NiO x /钙钛矿界面较差的界面接触限制了光电探测器(PD)性能的提高。在这项工作中,引入2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷(F4-TCNQ)来修饰NiO x /钙钛矿界面以制备高性能PD。该研究表明 F4-TCNQ 层与 NiO x /钙钛矿层相互作用。它可以增加Ni 3+ /Ni 2+比率,然后提高空穴提取和电荷载流子迁移率;相反,它可以形成新的路易斯加合物,钝化配位不足的Pb 2+离子。此外,通过 F4-TCNQ 改性,钙钛矿薄膜表现出良好的热稳定性和光稳定性。PD在大气中表现出优异的光电性能和长期稳定性。这一发现为进一步开发 NiO x /钙钛矿界面提供了一种简单有效的方法。