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N-doped porous carbon derived from rGO-Incorporated polyphenylenediamine composites for CO2 adsorption and supercapacitors
Journal of Power Sources ( IF 8.1 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.jpowsour.2020.228610 Yuan Wang , Hanzhi Wang , Tian C. Zhang , Shaojun Yuan , Bin Liang
Journal of Power Sources ( IF 8.1 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.jpowsour.2020.228610 Yuan Wang , Hanzhi Wang , Tian C. Zhang , Shaojun Yuan , Bin Liang
Abstract A novel hierarchical porous carbon derived from poly(p-phenylenediamine) incorporated with reduced graphene oxide (rGO) is prepared for CO2 capture and supercapacitors. In this synthesis, chemically in-situ oxidative polymerization and KOH chemical activation are employed with the controllable introduction of GO (GO/Polyphenylenediamine = 0–2 wt%). The obtained carbon material (APG-1%) with high surface area (860.4 m2 g−1) and rich N content (7.91 wt%) exhibits excellent CO2 capture ability (4.65 mmol g−1 at 298 K, 5 bar) and good electrochemical performance as a supercapacitor electrode with 158.5 F g−1 in 6 M KOH at a current density of 1 A g−1. Even at a high current density of 10 A g−1, a capacity of 115.2 F g−1 is still maintained. The rational addition of rGO provides an effective strategy of simultaneous improvement of CO2 adsorption and capacitive performance.
中文翻译:
N 掺杂多孔碳衍生自掺入 rGO 的聚苯二胺复合材料,用于 CO2 吸附和超级电容器
摘要 制备了一种由聚对苯二胺和还原氧化石墨烯 (rGO) 结合而成的新型分层多孔碳,用于 CO2 捕获和超级电容器。在该合成中,采用化学原位氧化聚合和 KOH 化学活化以及可控引入 GO(GO/聚苯二胺 = 0-2 wt%)。获得的碳材料 (APG-1%) 具有高表面积 (860.4 m2 g-1) 和丰富的 N 含量 (7.91 wt%) 表现出优异的 CO2 捕获能力 (4.65 mmol g-1 at 298 K, 5 bar) 和良好的在 1 A g-1 的电流密度下,在 6 M KOH 中作为超级电容器电极的电化学性能为 158.5 F g-1。即使在 10 A g-1 的高电流密度下,仍然保持 115.2 F g-1 的容量。
更新日期:2020-10-01
中文翻译:
N 掺杂多孔碳衍生自掺入 rGO 的聚苯二胺复合材料,用于 CO2 吸附和超级电容器
摘要 制备了一种由聚对苯二胺和还原氧化石墨烯 (rGO) 结合而成的新型分层多孔碳,用于 CO2 捕获和超级电容器。在该合成中,采用化学原位氧化聚合和 KOH 化学活化以及可控引入 GO(GO/聚苯二胺 = 0-2 wt%)。获得的碳材料 (APG-1%) 具有高表面积 (860.4 m2 g-1) 和丰富的 N 含量 (7.91 wt%) 表现出优异的 CO2 捕获能力 (4.65 mmol g-1 at 298 K, 5 bar) 和良好的在 1 A g-1 的电流密度下,在 6 M KOH 中作为超级电容器电极的电化学性能为 158.5 F g-1。即使在 10 A g-1 的高电流密度下,仍然保持 115.2 F g-1 的容量。