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Physical properties of crystalline NaNbO3 thin film grown on Sr2Nb3O10 nanosheets at low temperatures for piezoelectric energy harvesters
Applied Surface Science ( IF 6.3 ) Pub Date : 2022-04-21 , DOI: 10.1016/j.apsusc.2022.153464
Jong-Un Woo 1 , In-Su Kim 2 , Bumjoo Kim 2 , Sahn Nahm 1, 2
Affiliation  

A Sr2Nb3O10 (SN) monolayer deposited on Pt/SiO2/Si (PSS) was employed as the template for the growth of crystalline NaNbO3 (NNO) thin films at low temperatures. The [001]-oriented crystalline NNO film was effectively grown on SN/PSS at 250 °C. This NNO film showed a small εr of 115, along with good insulating properties with a low leakage-current density (4.5 × 10–6 A/cm2 at 0.3 MV/cm). This NNO film displayed a large d33 of 123 pC/N, which is the largest d33 value for NNO films to date. Moreover, it shows a very large d33 × g33 (14.8 × 10–12 m2/N), which is the figure of merit for the power of piezoelectric energy harvesters (PEHs). The NNO film grown on SN/Ni at 250 °C for the fabrication of PEH also demonstrated dielectric and piezoelectric characteristics. The NNO PEH exhibited a high power density (2.1 μW/mm3), indicating that the [001]-oriented NNO film grown on the SN seed layer is a good candidate for PEH. Moreover, this NNO film can be deposited on a polymer substrate and utilized as a future flexible device owing to its very low growth temperature and good physical properties.

中文翻译:


用于压电能量收集器的 Sr2Nb3O10 纳米片上低温生长的结晶 NaNbO3 薄膜的物理性能



沉积在 Pt/SiO2/Si (PSS) 上的 Sr2Nb3O10 (SN) 单层被用作在低温下生长结晶 NaNbO3 (NNO) 薄膜的模板。[001] 取向的结晶 NNO 薄膜在 250 °C 的 SN/PSS 上有效生长。 该 NNO 薄膜显示出 115 的小 εr,以及良好的绝缘性能和低泄漏电流密度(0.3 MV/cm 时为 4.5 × 10–6 A/cm2)。这部 NNO 胶片显示出 123 pC/N 的大 d33,这是迄今为止 NNO 胶片中最大的 d33 值。此外,它显示了非常大的 d33 × g33(14.8 × 10-12 m2/N),这是压电能量收集器 (PEH) 功率的品质因数。在 250 °C 下在 SN/Ni 上生长用于制备 PEH 的 NNO 薄膜也表现出介电和压电特性。NNO PEH 表现出高功率密度 (2.1 μW/mm3),表明在 SN 种子层上生长的 [001] 定向 NNO 薄膜是 PEH 的良好候选者。此外,这种 NNO 薄膜由于其非常低的生长温度和良好的物理性能,可以沉积在聚合物衬底上并用作未来的柔性器件。
更新日期:2022-04-21
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