α-BaF2 Nanoparticle Substrate-Enabled γ-CsPbI3 Heteroepitaxial Growth for Efficient and Bright Deep-Red Light-Emitting Diodes,Journal of the American Chemical Society

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α-BaF2 Nanoparticle Substrate-Enabled γ-CsPbI3 Heteroepitaxial Growth for Efficient and Bright Deep-Red Light-Emitting Diodes
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2022-04-20 , DOI: 10.1021/jacs.2c01034
Qian Zhang _{1,

2} , Yong-Hui Song _{1,

2} , Jing-Ming Hao _{1,

2} , Yi-Feng Lan _{1,

2} , Li-Zhe Feng _{1,

2} , Xue-Chen Ru _{1,

2} , Jing-Jing Wang _{1,

2} , Kuang-Hui Song _{1,

2} , Jun-Nan Yang _{1,

2} , Tian Chen _{1,

2} , Hong-Bin Yao _{1,

2}

Affiliation

All-inorganic CsPbI₃ perovskite is attractive for deep-red light-emitting diodes (LEDs) because of its excellent carrier mobility, high color purity, and solution processability. However, the high phase transition energy barrier of optically active CsPbI₃ black phase hinders the fabrication of efficient and bright LEDs. Here, we report a novel α-BaF₂ nanoparticle substrate-promoted solution-processable heteroepitaxial growth to overcome this hindrance and obtain high-quality optically active γ-CsPbI₃ thin films, achieving efficient and bright deep-red LEDs. We unravel that the highly exposed planes on the α-BaF₂ nanoparticle-based heteroepitaxial growth substrate have a 99.5% lattice matching degree with the (110) planes of γ-CsPbI₃. This ultrahigh lattice matching degree initiates solution-processed interfacial strain-free epitaxial growth of low-defect and highly oriented γ-CsPbI₃ thin films on the substrate. The obtained γ-CsPbI₃ thin films are uniform, smooth, and highly luminescent, based on which we fabricate efficient and bright deep-red LEDs with a high peak external quantum efficiency of 14.1% and a record luminance of 1325 cd m^–2.

中文翻译：

α-BaF2 纳米颗粒衬底启用 γ-CsPbI3 异质外延生长，用于高效和明亮的深红色发光二极管

全无机 CsPbI ₃钙钛矿因其出色的载流子迁移率、高色纯度和溶液可加工性而对深红色发光二极管 (LED) 具有吸引力。_{然而，光学活性CsPbI 3}黑相的高相变能垒阻碍了高效和明亮LED的制造。在这里，我们报告了一种新型 α-BaF ₂纳米颗粒基板促进的溶液可加工异质外延生长，以克服这一障碍并获得高质量的光学活性 γ-CsPbI ₃薄膜，从而实现高效和明亮的深红色 LED。我们揭示了 α-BaF _{2上高度暴露的平面}基于纳米粒子的异质外延生长衬底与γ-CsPbI ₃的(110)晶面的晶格匹配度为99.5% 。这种超高的晶格匹配度启动了低缺陷和高取向 γ-CsPbI ₃薄膜在衬底上的溶液处理界面无应变外延生长。获得的 γ-CsPbI ₃薄膜均匀、光滑、发光度高，在此基础上，我们制造了高效、明亮的深红色 LED，其峰值外量子效率高达 14.1%，亮度达到创纪录的 1325 cd m ^-2。

更新日期：2022-04-20

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