Phonon and Exciton Properties between WS2 and MoS2 Layers via Inversion Heterostructure Engineering,ACS Applied Materials & Interfaces

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Phonon and Exciton Properties between WS2 and MoS2 Layers via Inversion Heterostructure Engineering
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-04-14 , DOI: 10.1021/acsami.1c24368
Ming-Ming Yang ₁ , Yu-Chen Leng _{2,

3} , Yan-Liang Liu ₁ , Yi Liu ₁ , Ya-Nan Zhao ₁ , Li Tan ₁ , Xiao-Wen Hu ₁ , Ru-Qian Lian ₁ , Xue-Lu Liu ₂ , Ri-Dong Cong ₁ , Shi-Shuai Sun ₄ , Xiao-Li Li _{1,

5}

Affiliation

Recently, two-dimensional (2D) van der Waals heterostructures (vdWHs) have exhibited emergent electronic and optical properties due to their peculiar phonons and excitons, which lay the foundation for the development of photoelectronic devices. The dielectric environment plays an important role in the interlayer coupling of vdWHs. Here, we studied the interlayer and extra-layer dielectric effects on phonon and exciton properties in WS₂/MoS₂ and MoS₂/WS₂ vdWHs by Raman and photoluminescence (PL) spectroscopy. The ultralow frequency (ULF) Raman modes are insensitive to atomic arrangement at the interface between 1LW and 1LM and dielectric environments of neighboring materials, and the layer breathing mode (LBM) frequency follows that of WS₂. The shift of high-frequency (HF) Raman modes is attributable to interlayer dielectric screening and charge transfer effects. Furthermore, the energy of interlayer coupling exciton peak I is insensitive to atomic arrangement at the interface between 1LW and 1LM and its energy follows that of MoS₂, but the slight intensity difference in inversion vdWHs means that the substrate’s dielectric properties may induce doping on the bottom layer. This paper provides fundamental understanding of phonon and exciton properties of such artificially formed vdWHs structures, which is important for new insights into manipulating the performances of potential devices.

中文翻译：

通过反相异质结构工程在 WS2 和 MoS2 层之间的声子和激子特性

最近，二维（2D）范德华异质结构（vdWHs）由于其独特的声子和激子而表现出新兴的电子和光学特性，为光电器件的发展奠定了基础。介电环境在 vdWH 的层间耦合中起着重要作用。在这里，我们研究了层间和层外介电效应对 WS ₂ /MoS ₂和 MoS ₂ /WS _{2中声子和激子特性的影响。}拉曼光谱和光致发光 (PL) 光谱法测定的 vdWH。超低频（ULF）拉曼模式对1LW和1LM之间界面的原子排列以及相邻材料的介电环境不敏感，层呼吸模式（LBM）频率遵循WS ₂。高频 (HF) 拉曼模式的转变可归因于层间介电屏蔽和电荷转移效应。此外，层间耦合激子峰I的能量对1LW和1LM之间界面处的原子排列不敏感，其能量遵循MoS _{2的能量。}，但反转 vdWHs 的轻微强度差异意味着衬底的介电特性可能会在底层引起掺杂。本文提供了对这种人工形成的 vdWHs 结构的声子和激子特性的基本理解，这对于操纵潜在器件性能的新见解非常重要。

更新日期：2022-04-14

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