In this work, we proposed a novel method to form a buried heavily boron (B) doped p⁺-structure with a step-free diamond surface in nitrogen doped diamond (1 1 1) based on homoepitaxial lateral growth technique. The buried structure with a size of 10 µm × 10 µm × 0.085 µm was fabricated by inductively coupled plasma (ICP) etching of the mesa structure and subsequent heavy B-doping, with a boron to carbon (B/C) ratio of 15,000 ppm in the microwave-plasma-assisted chemical vapor deposition (MPCVD). The surface morphology of the buried area and its surrounding were observed by laser microscopy (LM) and atomic force microscopy (AFM), which showed atomically flat surfaces before and even after B doping. Surface potential difference measurements on both areas were applied using Kelvin-probe force microscopy (KFM). The intensity imaging of B concentration in and around the buried areas were measured by dynamic secondary ion mass spectrometry (SIMS), which confirmed the heavy B doping of the buried structure and the depth profile shows that B doping is uniform, with a concentration of 2 × 10²⁰ atoms/cm³.

在这项工作中，我们提出了一种在氮掺杂金刚石（¹  1 1）基于同质外延横向生长技术。尺寸为 10 µm × 10 µm × 0.085 µm 的掩埋结构是通过台面结构的电感耦合等离子体 (ICP) 蚀刻和随后的重 B 掺杂制成的，硼碳 (B/C) 比为 15,000 ppm在微波等离子体辅助化学气相沉积 (MPCVD) 中。用激光显微镜（LM）和原子力显微镜（AFM）观察了掩埋区及其周围的表面形貌，在掺杂B之前甚至之后都显示出原子级的平坦表面。使用开尔文探针力显微镜 (KFM) 对两个区域进行表面电位差测量。通过动态二次离子质谱（SIMS）测量掩埋区及其周围B浓度的强度成像，²⁰个原子/cm ³。