Micro and nanostructured organic thin films offer flexible and scalable ways for high-performance organic/inorganic optoelectronics. Consequently, herein, N-(4-methoxy-2-nitrophenyl) acetamide (4M2NPA) thin films are prepared using a solution-processable spin coating technique at different thicknesses. The thickness-dependent structural parameters such as crystallite size and microstrain are estimated and enhanced with film thickness. The FESEM micrographs showed the microrod-based films with a diameter of range (0.40–0.65) μm and a length in the range of (1.5–2) μm. Moreover, the linear optical transmittance, reflectance, and absorbance of the fabricated 4M2NPA thin films are measured in the range of (190–2500) nm. The dispersion behavior of the prepared films is analyzed and explained based on the single oscillator model. Additionally, the increment of film thickness induced a decrease in the energy gap, E_g, from 2.34 to 2.24 eV, and an increase of Urbach energy, E_u, from 125.6 eV to 132.8 meV. The oscillator strength and electric dipole strength are calculated and interpreted in detail. The thickness-dependence of the microelectronic parameters of the manufactured Ag/4M2NPA/p-Si/Al heterojunction is evaluated from the measured dark current-voltage relation. The photoresponse of the implemented heterojunctions with different thicknesses of the organic layer is observed with enhanced photocurrent. The light sensor's figures of merit such as responsivity, specific detectivity, linear dynamic range, and signal to noise ratio showed a thickness-dependent behavior and were found to be 45.26 mA/W, 2.09 × 10¹⁰ Jones, 49.85 dB, and 310.7, respectively for the highest thickness of 4M2NPA. Furthermore, the fabricated heterojunction devices showed a fast and stable switching response with t_rise/t_fall ∼ 51 ms/45 ms for the thickest 4M2NPA film.

微米和纳米结构的有机薄膜为高性能有机/无机光电子学提供了灵活且可扩展的方式。因此，在本文中，N-(4-甲氧基-2-硝基苯基)乙酰胺( 4M2NPA )薄膜使用可溶液加工的旋涂技术以不同的厚度制备。估计和增强薄膜厚度等与厚度相关的结构参数，如微晶尺寸和微应变。FESEM 显微照片显示了基于微棒的薄膜，其直径范围为 (0.40-0.65) μm，长度范围为 (1.5-2) μm。此外，制造的4M2NPA的线性光学透射率、反射率和吸光度薄膜的测量范围为 (190–2500) nm。基于单振子模型对制备薄膜的色散行为进行了分析和解释。此外，薄膜厚度的增加导致能隙E _g从 2.34 eV 减小到 2.24 eV，并且 Urbach 能量E _u从 125.6 eV 增加到 132.8 meV。详细计算和解释了振荡器强度和电偶极子强度。制造的Ag/ 4M2NPA / p的微电子参数的厚度依赖性-Si/Al 异质结由测得的暗电流-电压关系进行评估。用增强的光电流观察具有不同厚度的有机层的异质结的光响应。光传感器的品质因数（例如响应度、比检测率、线性动态范围和信噪比）表现出与厚度相关的行为，被发现为 45.26 mA/W、2.09 × 10 ¹⁰ Jones、49.85 dB 和 310.7，最高厚度分别为4M2NPA。此外，对于最厚的4M2NPA薄膜，制造的异质结器件显示出快速且稳定的开关响应，t_上升/ t_下降∼ 51 ms/45 ms 。