Single Bi3+ Ultrabroadband White Luminescence in Double Perovskite via Crystal Lattice Engineering toward Light-Emitting Diode Applications,Advanced Optical Materials

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Single Bi3+ Ultrabroadband White Luminescence in Double Perovskite via Crystal Lattice Engineering toward Light-Emitting Diode Applications
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2022-04-05 , DOI: 10.1002/adom.202102842
Sheng Wu ₁ , Quan Liu ₁ , Puxian Xiong ₂ , Weiwei Chen ₃ , Quan Dong ₃ , Dongdan Chen ₃ , Dong Wang ₁ , Guoxing Zhang ₁ , Yan Chen ₁ , Guogang Li _{4,

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Affiliation

Single-phase white luminescence phosphors are emerging for potential phosphor-converted white light-emitting diodes (pc-WLEDs) and alternatives to trichromatic phosphor blends. In this work, Ba₂ZnWO₆:Bi³⁺ phosphors are prepared by a high-temperature solid-state reaction method and the luminescent properties are investigated. The broadband excitation from 250 to 400 nm is perfectly matched with the emission of nearly ultraviolet (n-UV) InGaN chip, which ultrabroadband emission band (full width at half maximum = 217 nm) can cover a wider luminescence region. Li⁺/Na⁺/K⁺ codoping is more desirable for the ultrabroadband emission of Ba₂ZnWO₆:0.006Bi³⁺ due to the charge compensation and rationally designed lattice distortion while improving the thermal stability of the phosphor. Furthermore, tunable emissions can be achieved either by changing the content of doped ions or the excitation wavelength due to the different occupation of Ba²⁺ and Zn²⁺ sites by Bi³⁺ ions. Finally, single-phase warm WLED ((x, y) = (0.4170, 0.4035)) devices with a correlated color temperature of 3329 K and color rendering index of Ra = 75.3 are successfully prepared using Ba₂ZnWO₆:0.006Bi³⁺, 0.03Na⁺ phosphor, and 365 nm InGaN chips. These results indicate that Ba₂ZnWO₆:Bi³⁺ has excellent potential as phosphor for n-UV pc-WLEDs and provides new ideas for the application of ultrabroadband emitting phosphors in WLEDs.

中文翻译：

通过晶格工程在双钙钛矿中的单 Bi3+ 超宽带白光发光二极管应用

单相白色发光荧光粉正在出现，用于潜在的荧光粉转换白色发光二极管 (pc-WLED) 和三原色荧光粉混合物的替代品。本工作采用高温固相反应法制备了Ba ₂ ZnWO ₆ :Bi ^{3+荧光粉，并对其发光性能进行了研究。}250-400nm的宽带激发与近紫外（n-UV）InGaN芯片的发射完美匹配，超宽带发射带（半高全宽=217nm）可以覆盖更宽的发光区域。Li ⁺ /Na ⁺ /K ⁺共掺杂更适合 Ba ₂ ZnWO _{6的超宽带发射}:0.006Bi ³⁺由于电荷补偿和合理设计的晶格畸变同时提高了荧光粉的热稳定性。此外，由于Bi ^{3+离子对Ba}²⁺和Zn ²⁺位点的不同占据，可以通过改变掺杂离子的含量或激发波长来实现可调发射。_{最后，利用Ba 2} ZnWO ₆ :0.006Bi ³⁺成功制备了相关色温为3329 K、显色指数为Ra = 75.3的单相暖WLED(( x , y ) = (0.4170, 0.4035))器件。 , 0.03Na ⁺荧光粉和 365 nm InGaN 芯片。这些结果表明Ba ₂ ZnWO ₆ :Bi ³⁺具有作为n-UV pc-WLEDs荧光粉的良好潜力，为超宽带发光荧光粉在WLEDs中的应用提供了新思路。

更新日期：2022-04-05

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