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NaGa3Se5: An Infrared Nonlinear Optical Material with Balanced Performance Contributed by Complex {[Ga3Se5]−}∞ Anionic Network
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2022-03-28 , DOI: 10.1021/acs.inorgchem.2c00623
Qian-Ting Xu 1 , Shan-Shan Han 1 , Jia-Nuo Li 1 , Sheng-Ping Guo 1
Affiliation  

Second-order nonlinear optical (NLO) materials are extensively applied in laser-related techniques. For developing IR NLO materials, chalcogenides are the main candidates. Here, NaGa3Se5 was explored as inspired by its unique anionic structure. It crystallizes with the orthorhombic chiral P212121 structure, featuring 12 types of GaSe4 tetrahedra built into a three-dimensional {[Ga3Se5]} anionic network, representing a new NLO-functional motif. NaGa3Se5 exhibits large and phase-matchable NLO response 1.37 × AgGaS2. It has the largest band gap among the noncentrosymmetric A–MIII–Se (A = alkali metal; M = Ga, In) compounds. The NLO properties’ origin is explored via theoretical analysis. The success of NaGa3Se5 contributes a practical case for exploring new NLO materials.

中文翻译:

NaGa3Se5:复合{[Ga3Se5]−}∞阴离子网络贡献的具有平衡性能的红外非线性光学材料

二阶非线性光学 (NLO) 材料广泛应用于激光相关技术。对于开发 IR NLO 材料,硫属化物是主要候选者。在这里,NaGa 3 Se 5受到其独特的阴离子结构的启发而被探索。它以正交手性P 2 1 2 1 2 1结构结晶,具有 12 种 GaSe 4四面体构建成三维 {[Ga 3 Se 5 ] - } 阴离子网络,代表新的 NLO 功能基序。钠镓35表现出大且相位匹配的 NLO 响应 1.37 × AgGaS 2它在非中心对称的 A-M III -Se(A = 碱金属;M = Ga,In)化合物中具有最大的带隙。通过理论分析探讨了 NLO 属性的起源。NaGa 3 Se 5的成功为探索新的非线性光学材料提供了一个实际案例。
更新日期:2022-03-28
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