Phase transition of HfO₂ thin film has been investigated to demonstrate desirable electrical properties, such as high dielectric constant or ferroelectricity, however, the most of results exhibited a limitation on enhancing the crystallinity because of employing dopant. In this study, the crystallization behavior in the thin film was investigated in the intrinsic and extrinsic aspects. In the laminated structure, highly crystallized tetragonal phased HfO₂ was obtained by controlling the layer thickness and adapting the template effect for intrinsic and extrinsic crystallization, respectively, without using dopant. Moreover, by the phase composition analysis, the dielectric constant of various crystal structures of HfO₂ thin film, tetragonal, monoclinic, and amorphous phases, were revealed using the data obtained from the real deposited thin film by atomic layer deposition process, not from the theoretical calculation.

_{已经研究了 HfO 2}薄膜的相变以展示理想的电性能，例如高介电常数或铁电性，然而，由于使用掺杂剂，大多数结果显示出对提高结晶度的限制。在这项研究中，从内在和外在方面研究了薄膜中的结晶行为。在叠层结构中，通过控制层厚度和使模板效应分别适应本征和外征结晶，在不使用掺杂剂的情况下，获得了高度结晶的四方相HfO _{2 。此外，通过相组成分析，HfO 2}各种晶体结构的介电常数薄膜、四方晶相、单斜晶相和非晶相是使用通过原子层沉积工艺从实际沉积薄膜中获得的数据而不是从理论计算中获得的数据来揭示的。