The presence of grain boundaries is inevitable for chemical vapor deposition (CVD)-grown MoS₂ domains owing to various merging behaviors, which greatly limits its potential applications in novel electronic and optoelectronic devices. It is therefore of great significance to unravel the merging behaviors of the synthesized polygon shape MoS₂ domains. Here we provide systematic investigations of merging behaviors and electrostatic properties of CVD-grown polycrystalline MoS₂ crystals by multiple means. Morphological results exhibit various polygon shape features, ascribed to polycrystalline crystals merged with triangle shape MoS₂ single crystals. The thickness of triangle and polygon shape MoS₂ crystals is identical manifested by Raman intensity and peak position mappings. Three merging behaviors are proposed to illustrate the formation mechanisms of observed various polygon shaped MoS₂ crystals. The combined photoemission electron microscopy and kelvin probe force microscopy results reveal that the surface potential of perfect merged crystals is identical, which has an important implication for fabricating MoS₂-based devices.

中文翻译：

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揭示CVD生长的单层MoS2域的合并行为和静电性质

由于各种合并行为，对于化学气相沉积（CVD）生长的MoS ₂域，晶界的存在是不可避免的，这极大地限制了其在新型电子和光电器件中的潜在应用。因此，阐明合成的多边形形状的MoS ₂域的合并行为具有重要意义。在这里，我们通过多种方法对CVD生长的多晶MoS ₂晶体的合并行为和静电性质进行了系统的研究。形态学结果显示出各种多边形形状特征，这归因于与三角形MoS ₂单晶合并的多晶晶体。三角形和多边形形状的厚度MoS ₂拉曼强度和峰位置图显示出相同的晶体。提出了三种合并行为，以说明观察到的各种多边形的MoS ₂晶体的形成机理。结合的光发射电子显微镜和开尔文探针力显微镜结果表明，完美融合晶体的表面电势是相同的，这对于制造基于MoS ₂的器件具有重要意义。