当前位置：
X-MOL 学术
›
Cryst. Growth Des.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Evolution Mechanism of Solid–Liquid Interface of Large-Sized Bulk Polysilicon via Si–Sn Solution Growth
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2022-03-11 , DOI: 10.1021/acs.cgd.1c01512 Yongsheng Ren 1, 2, 3 , Hui Chen 3 , Wenhui Ma 1, 2 , Yi Zeng 1, 2 , Kazuki Morita 3
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2022-03-11 , DOI: 10.1021/acs.cgd.1c01512 Yongsheng Ren 1, 2, 3 , Hui Chen 3 , Wenhui Ma 1, 2 , Yi Zeng 1, 2 , Kazuki Morita 3
Affiliation
|
A Si–Sn alloy melt solution was employed to grow large-area bulk Si while overcoming difficulties associated with high-temperature crystal transformation. Electron backscattered diffraction characterization of the solution-grown Si, hybridized with theoretical calculation, enabled identification of the primary dendrite and elucidated the preferential formation of grains in the bulk crystal. Migration of the solid–liquid solution interface during directional solidification was simulated at macroscopic and microscopic scales to estimate the interfacial energy at different temperature gradients. Residual concentrations of Sn in the bulk primary Si were found to be significantly closer to the solid solubility limit than impurity concentrations in Si previously grown from Si–Al and Si–Cu solutions.
中文翻译：
Si-Sn溶液生长的大尺寸块状多晶硅固液界面演化机制
采用 Si-Sn 合金熔体溶液来生长大面积体硅，同时克服与高温晶体转变相关的困难。溶液生长 Si 的电子背散射衍射表征与理论计算相结合，能够识别初级枝晶并阐明晶体中晶粒的优先形成。在宏观和微观尺度上模拟了定向凝固过程中固-液溶液界面的迁移，以估计不同温度梯度下的界面能。与之前从 Si-Al 和 Si-Cu 溶液中生长的 Si 中的杂质浓度相比，发现块状初生 Si 中 Sn 的残留浓度显着接近固溶度极限。
更新日期：2022-03-11
中文翻译：
Si-Sn溶液生长的大尺寸块状多晶硅固液界面演化机制
采用 Si-Sn 合金熔体溶液来生长大面积体硅，同时克服与高温晶体转变相关的困难。溶液生长 Si 的电子背散射衍射表征与理论计算相结合，能够识别初级枝晶并阐明晶体中晶粒的优先形成。在宏观和微观尺度上模拟了定向凝固过程中固-液溶液界面的迁移，以估计不同温度梯度下的界面能。与之前从 Si-Al 和 Si-Cu 溶液中生长的 Si 中的杂质浓度相比，发现块状初生 Si 中 Sn 的残留浓度显着接近固溶度极限。
京公网安备 11010802027423号