X-ray diffraction and differential-thermal analysis methods were used for investigation of the component interaction in the Cu₂S ​− ​Ga₂S₃ – In₂S₃ system. The existence of the quaternary phase CuGa_xIn_5-xS₈ where 1.4 ​≤ ​x ​≤ ​2.05 ​at 820 ​K was confirmed. The crystal structure of the quaternary phase was determined by X-ray powder method for the CuGa_1.6In_3.4S₈ composition as the trigonal symmetry, S.G. P-3m, with the cell parameters a ​= ​0.38237(3) nm, c ​= ​3.0870(2) nm. Five vertical sections and the liquidus surface projection of the system were investigated. A single crystal CuGa_1.9In_3.1S₈ was grown by solution-melt method, and its physical parameters such as bandgap energy and photosensitivity range were investigated.

X射线衍射和差热分析方法用于研究Cu ₂ S - - Ga ₂ S ₃ - In ₂ S ₃体系中的组分相互作用。确认了在 820 K 时 1.4 ≤ x ≤ 2.05的四元相 CuGa _x In _5-x S _{8的存在。}四元相的晶体结构采用X射线粉末法测定，CuGa _1.6 In _3.4 S ₈成分为三角对称，SG P -3 m，晶胞参数a  = 0.38237(3) nm, c = 3.0870(2) 纳米。研究了系统的五个垂直截面和液相线表面投影。采用溶液熔融法生长单晶CuGa _1.9 In _3.1 S _{8 ，研究了其带隙能量和光敏范围等物理参数。}