2D Cairo Pentagonal PdPS: Air-Stable Anisotropic Ternary Semiconductor with High Optoelectronic Performance,Advanced Functional Materials

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2D Cairo Pentagonal PdPS: Air-Stable Anisotropic Ternary Semiconductor with High Optoelectronic Performance
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-02-15 , DOI: 10.1002/adfm.202113255
Ruihuan Duan _{1,

2} , Yanchao He ₃ , Chao Zhu ₃ , Xiaowei Wang ₃ , Chao Zhu ₃ , Xiaoxu Zhao ₃ , Zhonghan Zhang _{1,

2} , Qingsheng Zeng ₃ , Ya Deng ₃ , Manzhang Xu ₃ , Zheng Liu _{1,

2,

3,

4}

Affiliation

Pentagonal 2D materials as a new member in the 2D material family have attracted increasing attention due to the exotic physical properties originating from the unique Cairo pentagonal tiling topology. Herein, the penta-PdPS atomic layers as a new air-stable 2D semiconductor with the unique puckered pentagonal low-symmetry structure are successfully exfoliated from bulk crystals grown via chemical vapor transport (CVT). Notably, 2D penta-PdPS exhibits outstanding electronic and optoelectronic performance under 650 nm laser: high electron mobility of ≈208 cm² V⁻¹ s⁻¹, an ultrahigh on/off ratio of ≈10⁸, a high photoresponsivity of 5.2 × 10⁴ A W⁻¹, a high photogain of 1.0 × 10⁵, an ultrahigh detectivity of 1.0 × 10¹³ Jones, respectively. Significantly, the exceptional puckered pentagonal atomic structure of 2D PdPS makes it strong in-plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating a sizeable anisotropic ratio of carrier mobility and photocurrent with the value of up to 3.9 and 2.3, respectively. These excellent properties make 2D Cairo Pentagonal PdPS a potential candidate in nanoelectronics, optoelectronics, polarized-nanoelectronics, which will significantly promote the development of 2D materials.

中文翻译：

2D Cairo Pentagonal PdPS：具有高光电性能的空气稳定各向异性三元半导体

五边形二维材料作为二维材料家族的新成员，由于源自独特的开罗五边形平铺拓扑结构的奇异物理特性，引起了越来越多的关注。在这里，作为一种具有独特褶皱五边形低对称结构的新型空气稳定二维半导体，五-PdPS 原子层成功地从通过化学气相传输 (CVT) 生长的块状晶体中剥离。值得注意的是，2D penta-PdPS 在 650 nm 激光下表现出出色的电子和光电性能：≈208 cm ² V ^-1 s ^{-1的高电子迁移率，≈10}⁸的超高开/关比，5.2 × 10 的高光响应性⁴ AW ^-1，1.0 × 10 的高光增益^如图5所示，超高探测率分别为1.0 × 10 ¹³ Jones。值得注意的是，二维 PdPS 特殊的褶皱五边形原子结构使其在光学、电子和光电特性方面具有很强的面内各向异性，表现出相当大的载流子迁移率和光电流的各向异性比，分别高达 3.9 和 2.3。这些优异的特性使二维开罗五角PdPS成为纳米电子学、光电子学、极化纳米电子学的潜在候选者，将显着推动二维材料的发展。

更新日期：2022-02-15

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