元素锑的室温原子层沉积,Chemistry of Materials

当前位置： X-MOL 学术 › Chem. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

元素锑的室温原子层沉积
Chemistry of Materials ( IF 7.2 ) Pub Date : 2022-02-14 , DOI: 10.1021/acs.chemmater.1c04411
Majeda Al Hareri ₁ , David J. H. Emslie ₁

Affiliation

使用 Sb(SiMe ₃ ) ₃和 SbCl ₃在氢端硅 (H-Si) 和 SiO _{2 /Si 衬底上实现元素锑的原子层沉积 (ALD)}在 23–65 °C 的温度范围内。通过XPS（对于在35℃沉积的薄膜）和XRD证实镜状薄膜由结晶锑组成，具有低杂质水平和相对于衬底表面的晶体生长的强优先取向。据我们所知，这是纯元素的室温热 ALD（具有自限性生长）的第一个示例。35 °C 下的薄膜生长表现出基板增强机制，其特点是在前 ∼125 个 ALD 循环中薄膜生长更快，其中大量沉积发生在原始基板表面上（GPC = 1.3 Å/SiO ₂ /Si 和 1.0 Å循环/cycle on H–Si) 和较慢的薄膜生长 (GPC = 0.40 Å/cycle on SiO ₂/Si 和 H-Si 上 0.27 Å/循环）在 125 次循环后，一旦大部分初始衬底表面被覆盖。SEM 显示使用 500-2000 次 ALD 循环沉积的薄膜是连续的。少于 250 次循环的使用提供了不连续的薄膜。_{然而，在这个初始生长阶段，当沉积主要发生在原始基板表面上时，通过 Sb(SiMe 3} ) ₃或 SbCl ₃ （50 × 0.4 或 0.8 s 脉冲）进行原位表面预处理，然后使用更长的前驱体脉冲在前 50 个 ALD 循环期间（0.4 或 0.8 s）导致成核改善。例如，在 H-Si 上，在用 50 × 0.8 s SbCl _{3脉冲进行初始预处理后，会产生连续的 6.7 nm 厚的薄膜。}，然后使用 0.8 s 脉冲进行 50 个 ALD 循环。在表面预处理后的前 50 个 ALD 循环中使用较长的脉冲可能需要通过增加的反应表面位点密度来实现完全反应。

"点击查看英文标题和摘要"

Room-Temperature Atomic Layer Deposition of Elemental Antimony

Atomic layer deposition (ALD) of elemental antimony was achieved on hydrogen-terminated silicon (H–Si) and SiO₂/Si substrates using Sb(SiMe₃)₃ and SbCl₃ in the temperature range 23–65 °C. The mirrorlike films were confirmed to be composed of crystalline antimony by XPS (for the film deposited at 35 °C) and XRD, with low impurity levels and strong preferential orientation of crystal growth relative to the substrate surface. To the best of our knowledge, this is the first example of room-temperature thermal ALD (with demonstrated self-limiting growth) of a pure element. Film growth at 35 °C exhibited a substrate-enhanced mechanism, characterized by faster film growth for the first ∼125 ALD cycles, where substantial deposition occurs on the original substrate surface (GPC = 1.3 Å/cycle on SiO₂/Si and 1.0 Å/cycle on H–Si) and slower film growth (GPC = 0.40 Å/cycle on SiO₂/Si and 0.27 Å/cycle on H–Si) after ∼125 cycles, once much of the initial substrate surface has been covered. Films deposited using 500–2000 ALD cycles were shown to be continuous by SEM. The use of less than 250 cycles afforded discontinuous films. However, in this initial growth phase, when the deposition occurs primarily on the original substrate surface, in situ surface pretreatment by Sb(SiMe₃)₃ or SbCl₃ (50 × 0.4 or 0.8 s pulses) followed by the use of longer precursor pulses (0.4 or 0.8 s) during the first 50 ALD cycles resulted in improved nucleation. For example, on H–Si, a continuous 6.7 nm thick film was produced after initial pretreatment with 50 × 0.8 s pulses of SbCl₃, followed by 50 ALD cycles using 0.8 s pulses. The use of longer pulses in the first 50 ALD cycles following surface pretreatment is likely required to achieve complete reactivity with an increased density of reactive surface sites.

更新日期：2022-02-14

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南