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In Situ Growth Mechanism of CsPbX3 (X = Cl, Br, and I) Quantum Dots in an Amorphous Oxide Matrix
Chemistry of Materials ( IF 7.2 ) Pub Date : 2022-02-04 , DOI: 10.1021/acs.chemmater.1c03522
Ruilin Zheng 1 , Jumpei Ueda 1 , Kenji Shinozaki 2 , Setsuhisa Tanabe 1
Affiliation  

Oxide glass matrix embedding is an effective way to improve the stability of halide quantum dots (QDs). However, the in situ growth mechanism of halide perovskite QDs in an amorphous matrix has not been clarified. In this work, the growth process of halide QDs in an amorphous oxide matrix was successfully elucidated via in situ spectroscopy, analytical electron microscopy, and the X-ray scattering/diffraction technique. The results showed that the in situ growth mechanism of the halide QDs in the amorphous oxide matrix was different from that of traditional glass-ceramics, which was more like a halide nanoglass-based phase transition process. Typically, a complex multiphase (halide nanoglass, CsPb2X5, and CsPbX3) transition existed in the amorphous oxide matrix, and the obtained CsPbX3 QD glass showed a halide multiphase coexisting microstructure. More importantly, the crystallization process from the halide nanoglass to QDs can be induced by known ways, including mechanical force, hydration, and heat treatment. The clarified in situ growth mechanism may pave the way toward the development of high-efficiency halide perovskite QD-embedded amorphous materials and optoelectronic devices.

中文翻译:

非晶氧化物基质中 CsPbX3(X = Cl、Br 和 I)量子点的原位生长机制

氧化物玻璃基质嵌入是提高卤化物量子点(QD)稳定性的有效途径。然而,卤化物钙钛矿量子点在非晶基体中的原位生长机制尚未阐明。在这项工作中,通过原位光谱、分析电子显微镜和 X 射线散射/衍射技术成功地阐明了卤化物量子点在无定形氧化物基质中的生长过程。结果表明,卤化物量子点在非晶氧化物基体中的原位生长机理与传统微晶玻璃不同,更像是卤化物纳米玻璃基相变过程。通常,复杂的多相(卤化物纳米玻璃、CsPb 2 X 5和 CsPbX 3)过渡存在于非晶氧化物基体中,得到的CsPbX 3 QD玻璃呈现卤化物多相共存微观结构。更重要的是,从卤化物纳米玻璃到量子点的结晶过程可以通过已知方式诱导,包括机械力、水合和热处理。阐明的原位生长机制可能为开发高效卤化物钙钛矿QD嵌入的非晶材料和光电器件铺平道路。
更新日期:2022-02-04
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