How to Obtain Anti-Thermal-Quenching Inorganic Luminescent Materials for Light-Emitting Diode Applications,Advanced Optical Materials

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How to Obtain Anti-Thermal-Quenching Inorganic Luminescent Materials for Light-Emitting Diode Applications
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2022-01-17 , DOI: 10.1002/adom.202102287
Peipei Dang ₁ , Wei Wang ₂ , Hongzhou Lian ₁ , Guogang Li _{2,

3,

4} , Jun Lin _{1,

5}

Affiliation

Phosphor-converted light-emitting diode (pc-LED) has drawn much interest due to the efficient light in solid-state lighting, backlight display, security, and electronic devices. Thermal quenching (TQ) induced by nonradiative relaxation is one of the vital challenges that limits the widespread use of phosphors. Much efforts are devoted to designing different approaches to solve the emission loss at increasing temperature. Here, the mechanism of TQ and recent advances of anti-TQ-phosphor-involved 5d–4f, 4f–4f, 6p–6s, 3d–3d transitions are discussed. Several important design strategies for anti-TQ phosphors are summarized as follows: 1) defect engineering; 2) energy transfer; 3) structural modulation; 4) enhancing crystallinity; 5) layer structural design; 6) negative/zero thermal expansion; 7) surface coating and glass technology. Additionally, some future challenges and opportunities in this field are proposed. This review promotes the discovery of novel anti-TQ phosphor materials for LED applications.

中文翻译：

如何获得用于发光二极管应用的抗热猝灭无机发光材料

由于固态照明、背光显示、安全和电子设备中的高效光，磷光转换发光二极管 (pc-LED) 引起了极大的兴趣。由非辐射弛豫引起的热猝灭 (TQ) 是限制荧光粉广泛使用的重要挑战之一。许多努力致力于设计不同的方法来解决温度升高时的排放损失。在这里，讨论了 TQ 的机制和抗 TQ 荧光粉参与的 5d-4f、4f-4f、6p-6s、3d-3d 跃迁的最新进展。抗TQ荧光粉的几个重要设计策略总结如下：1）缺陷工程；2）能量转移；3）结构调制；4) 提高结晶度；5）分层结构设计；6) 负/零热膨胀；7）表面涂层和玻璃技术。此外，提出了该领域未来的一些挑战和机遇。本综述促进了用于 LED 应用的新型抗 TQ 荧光粉材料的发现。

更新日期：2022-01-17

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