Voss and Clarke observed 1/f noise in the square of Johnson noise across samples in thermal equilibrium without applying a current. We refer to this phenomenon as “thermal 1/f noise”. Voss and Clarke suggested spatially correlated temperature fluctuations as an origin of thermal 1/f noise; they also showed that thermal 1/f noise closely matches the 1/f spectrum obtained by passing a current through the sample. An intermittent generation–recombination (g–r) process has recently been introduced to interpret 1/f noise in semiconductors. The square of this intermittent g–r process generates a 1/f noise component which correlates with Voss and Clarke’s empirical findings. Traps which intermittently rather than continuously generate g–r pulses are suggested as the origin of 1/f noise under drift and thermal agitation. We see no need to introduce correlated temperature fluctuations or oxide traps with a large distribution of time constants to explain 1/f noise.

Voss 和 Clarke 在不施加电流的情况下，在热平衡的样品中观察到 Johnson 噪声平方中的 1/f 噪声。我们将这种现象称为“热 1/f 噪声”。Voss 和 Clarke 提出空间相关的温度波动是热 1/f 噪声的来源；他们还表明，热 1/f 噪声与通过样品通过电流获得的 1/f 频谱非常匹配。最近引入了间歇性生成-重组 (g-r) 过程来解释半导体中的 1/f 噪声。这种间歇性 g-r 过程的平方会产生一个 1/f 噪声分量，该分量与 Voss 和 Clarke 的经验发现相关。间歇性而不是连续产生 g-r 脉冲的陷阱被认为是漂移和热搅拌下 1/f 噪声的起源。