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Ultra-Sensitive Cubic-ITO/Silicon Photodiode via Interface Engineering of Native SiOx and Lattice-Strain-Assisted Atomic Oxidation
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-01-15 , DOI: 10.1002/adfm.202109794 Yibo Zhang 1 , Joel Y. Y. Loh 1 , Andrew G. Flood 1 , Chengliang Mao 2 , Geetu Sharma 1 , Nazir P. Kherani 1, 3
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2022-01-15 , DOI: 10.1002/adfm.202109794 Yibo Zhang 1 , Joel Y. Y. Loh 1 , Andrew G. Flood 1 , Chengliang Mao 2 , Geetu Sharma 1 , Nazir P. Kherani 1, 3
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A highly orientated cubic indium tin oxide (c-ITO)/native SiOx/n-Si Schottky photodiode with negligible electronic noise is demonstrated. This extraordinary property is achieved via simple interface engineering, which combines native SiOx, facile air-annealing, and the resulting ITO-lattice-strain-assisted oxidation of proximal underlying Si atoms. An exceptionally well-passivated ITO/n-Si interface is realized, which leads to a heretofore unreported single-atom-thin inversion layer observed via transmission electron microscopy imaging. The device exhibits a record-low dark current density of ≈3 × 10–8 A cm–2 at −5 V, a tenfold reduction over the lowest reported value. Additional excellent optoelectronic properties achieved include self-powered operation, high quantum efficiency, fast time response, and ultra-high sensitivity for low illumination signals. Interface characterization reveals that ITO-lattice relaxation and oxygen diffusion during annealing create a highly ordered c-ITO crystal and an extended ≈2.2 nm SiOx interlayer formed via atomic oxidation of the underlying pristine Si, thus rendering a high-quality interface. Moreover, the Schottky barrier is further enhanced by the presence of negatively charged sub-stoichiometric silicon oxide interlayer. These results bring forth new insights in the surface atomic oxidation process and the significance of natively grown SiOx which together contribute to the realization of economic highly sensitive photodetectors.
中文翻译：
通过原生 SiOx 的界面工程和晶格应变辅助原子氧化的超灵敏立方-ITO/硅光电二极管
展示了具有可忽略的电子噪声的高度取向的立方氧化铟锡 (c-ITO)/天然 SiO x / n -Si 肖特基光电二极管。这种非凡的特性是通过简单的界面工程实现的，该工程结合了天然 SiO x、简便的空气退火以及由此产生的 ITO 晶格应变辅助氧化附近的底层硅原子。实现了异常良好钝化的 ITO/ n - Si 界面，这导致通过透射电子显微镜成像观察到迄今为止未报道的单原子薄反转层。该器件的暗电流密度创历史新低，约为 3 × 10 –8 A cm –2在 -5 V 时，比报告的最低值减少了十倍。获得的其他优异光电特性包括自供电操作、高量子效率、快速时间响应以及对低照度信号的超高灵敏度。界面表征表明，退火过程中的 ITO 晶格弛豫和氧扩散产生了高度有序的 c-ITO 晶体，并通过底层原始 Si 的原子氧化形成了扩展的 ≈2.2 nm SiO x中间层，从而呈现出高质量的界面。此外，肖特基势垒因带负电的亚化学计量氧化硅中间层的存在而进一步增强。这些结果为表面原子氧化过程和天然生长的 SiO x的意义带来了新的见解它们共同有助于实现经济的高灵敏度光电探测器。
更新日期：2022-01-15
中文翻译：
通过原生 SiOx 的界面工程和晶格应变辅助原子氧化的超灵敏立方-ITO/硅光电二极管
展示了具有可忽略的电子噪声的高度取向的立方氧化铟锡 (c-ITO)/天然 SiO x / n -Si 肖特基光电二极管。这种非凡的特性是通过简单的界面工程实现的，该工程结合了天然 SiO x、简便的空气退火以及由此产生的 ITO 晶格应变辅助氧化附近的底层硅原子。实现了异常良好钝化的 ITO/ n - Si 界面，这导致通过透射电子显微镜成像观察到迄今为止未报道的单原子薄反转层。该器件的暗电流密度创历史新低，约为 3 × 10 –8 A cm –2在 -5 V 时，比报告的最低值减少了十倍。获得的其他优异光电特性包括自供电操作、高量子效率、快速时间响应以及对低照度信号的超高灵敏度。界面表征表明，退火过程中的 ITO 晶格弛豫和氧扩散产生了高度有序的 c-ITO 晶体，并通过底层原始 Si 的原子氧化形成了扩展的 ≈2.2 nm SiO x中间层，从而呈现出高质量的界面。此外，肖特基势垒因带负电的亚化学计量氧化硅中间层的存在而进一步增强。这些结果为表面原子氧化过程和天然生长的 SiO x的意义带来了新的见解它们共同有助于实现经济的高灵敏度光电探测器。
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