Functionalized MoS2 Nanoribbons for Intrinsic Cold-Source Transistors: A Computational Study,ACS Applied Nano Materials

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Functionalized MoS2 Nanoribbons for Intrinsic Cold-Source Transistors: A Computational Study
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2022-01-13 , DOI: 10.1021/acsanm.1c03793
Qianwen Wang ₁ , Pengpeng Sang ₁ , Wei Wei ₁ , Yuan Li ₁ , Jiezhi Chen ₁

Affiliation

Power dissipation is a great challenge for continuous size scaling in CMOS technology because of the thermal limitation on the switching rate of conventional transistors. Here, to break the thermal tyranny, we propose a series of intrinsic cold-source field-effect transistors (CS-FETs) with steep slopes based on armchair transition-metal dichalcogenides (TMD) nanoribbons (NRs) (MX₂NRs, M = Mo, W; X = S, Se, Te). The edge states of the TMD NRs can filter out the high-energy electrons and break the “Boltzmann tyranny” at room temperature. First-principles calculations unveil the electronic properties of −H, −F, and −H–O terminated MX₂NRs with different ribbon widths. Based on quantum transport simulation, −F and −H–O terminated MoS₂NRs present FET performance better than that of the −H terminated MoS₂NR. A steep subthreshold swing (28 mV/decade) and a large ON/OFF ratio (4 × 10⁵) are obtained for the 12-MoS₂NR–F FET with a 5 nm channel length. Moreover, the effects of the ribbon width, channel length, bias voltage, edge roughness, and defects on MoS₂NR–F FET performance are also investigated. This work demonstrates edge functionalization as an effective approach to modulate the TMD NRs and guides the design of intrinsic cold-source transistors.

中文翻译：

用于本征冷源晶体管的功能化 MoS2 纳米带：一项计算研究

由于传统晶体管开关速率的热限制，功耗对于 CMOS 技术中的连续尺寸缩放来说是一个巨大的挑战。在这里，为了打破热限制，我们提出了一系列基于扶手椅过渡金属二硫属化物 (TMD) 纳米带 (NRs) (MX ₂ NRs, M =钼、钨；X = S、硒、碲）。TMD NRs的边缘态可以过滤掉高能电子，打破室温下的“玻尔兹曼暴政”。第一性原理计算揭示了具有不同带宽度的 -H、-F 和 -H-O 封端的 MX _{2 NR 的电子特性。}基于量子传输模拟，-F 和 -H-O 终止 MoS ₂NR 的 FET 性能优于 -H 端接的 MoS ₂ NR。对于具有 5 nm 沟道长度的 12-MoS ₂ NR-F FET，获得了陡峭的亚阈值摆幅（28 mV/decade）和大的 ON/OFF 比（4 × 10 ^{5 ）。}此外，还研究了带宽度、沟道长度、偏置电压、边缘粗糙度和缺陷对 MoS ₂ NR-F FET 性能的影响。这项工作证明了边缘功能化是一种调制 TMD NR 并指导本征冷源晶体管设计的有效方法。

更新日期：2022-01-28

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