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Ligand Defect Density Regulation in Metal–Organic Frameworks by Functional Group Engineering on Linkers
Nano Letters ( IF 9.6 ) Pub Date : 2022-01-10 , DOI: 10.1021/acs.nanolett.1c04574 Qihao Yang 1, 2 , Yinming Wang 1, 2 , Xuan Tang 3 , Qiuju Zhang 1, 2 , Sheng Dai 3 , Huaitao Peng 1 , Yichao Lin 1, 2 , Ziqi Tian 1, 2 , Zhiyi Lu 1, 2 , Liang Chen 1, 2
Nano Letters ( IF 9.6 ) Pub Date : 2022-01-10 , DOI: 10.1021/acs.nanolett.1c04574 Qihao Yang 1, 2 , Yinming Wang 1, 2 , Xuan Tang 3 , Qiuju Zhang 1, 2 , Sheng Dai 3 , Huaitao Peng 1 , Yichao Lin 1, 2 , Ziqi Tian 1, 2 , Zhiyi Lu 1, 2 , Liang Chen 1, 2
Affiliation
Defects in solid materials vitally determine their physicochemical properties; however, facile regulation of the defect density is still a challenge. Herein, we demonstrate that the ligand defect density of metal–organic frameworks (MOFs) with a UiO-66 structural prototype is precisely regulated by tuning the linker groups (X = OMe, Me, H, F). Detailed analyses reveal that the ligand defect concentration is positively correlated with the electronegativity of linker groups, and Ce-UiO-66-F, constructed by F-containing ligands and Ce-oxo nodes, possesses the superior ligand defect density (>25%) and identifiable irregular periodicity. The increase in ligand defect density results in the reduction of the valence state and the coordination number of Ce sites in Ce-UiO-66-X, and this merit further validates the relationship between the defective structure and catalytic performance of CO2 cycloaddition reaction. This facile, efficient, and reliable strategy may also be applicable to precisely constructing the defect density of porous materials in the future.
中文翻译:
金属有机框架中的配体缺陷密度调节功能组工程对接头
固体材料的缺陷决定了它们的物理化学性质;然而,缺陷密度的轻松调节仍然是一个挑战。在这里,我们证明了具有 UiO-66 结构原型的金属有机框架 (MOF) 的配体缺陷密度可以通过调整连接基团 (X = OMe, Me, H, F) 来精确调节。详细分析表明,配体缺陷浓度与连接基团的电负性呈正相关,由含F配体和Ce-oxo节点构建的Ce-UiO-66-F具有优异的配体缺陷密度(>25%)和可识别的不规则周期性。配体缺陷密度的增加导致 Ce-UiO-66-X 中 Ce 位点的价态和配位数降低,2环加成反应。这种简便、高效、可靠的策略未来也可能适用于精确构建多孔材料的缺陷密度。
更新日期:2022-01-26
中文翻译:
金属有机框架中的配体缺陷密度调节功能组工程对接头
固体材料的缺陷决定了它们的物理化学性质;然而,缺陷密度的轻松调节仍然是一个挑战。在这里,我们证明了具有 UiO-66 结构原型的金属有机框架 (MOF) 的配体缺陷密度可以通过调整连接基团 (X = OMe, Me, H, F) 来精确调节。详细分析表明,配体缺陷浓度与连接基团的电负性呈正相关,由含F配体和Ce-oxo节点构建的Ce-UiO-66-F具有优异的配体缺陷密度(>25%)和可识别的不规则周期性。配体缺陷密度的增加导致 Ce-UiO-66-X 中 Ce 位点的价态和配位数降低,2环加成反应。这种简便、高效、可靠的策略未来也可能适用于精确构建多孔材料的缺陷密度。