The present research explores the fabrication of a metal insulator semiconductor Schottky barrier diode (SBD) with rare earth metal oxide (Yb₂O₃) thin films as insulators that are effectively developed on a large scale using the low-cost jet nebulizer spray pyrolysis technique (JNSP). The Yb₂O₃ thin films are deposited at various substrate temperatures (350 °C–550 °C) to ascertain its influence on the characteristic properties of the material. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, X-ray diffraction (XRD) analysis revealed the single crystalline cubic crystal structure of Yb₂O₃ thin films. Field emission scanning electron microscope (FESEM) images show the presence of uniformly distributed cage and globular like structures spread over the entire surface of the Yb₂O₃ films. The elemental composition study demonstrates the presence of Yb and O. The optical direct energy band gap of Yb₂O₃ thin films have been analyzed through UV-Visible spectra. Current – voltage measurements were analyzed in dark and light conditions for the Al/Yb₂O₃/p-Si structured Schottky barrier diodes (SBDs) which are fabricated with interfacial layers at different substrate temperatures. Further, the functionality of the SBDs was tested at different temperatures ranging from 30 °C to 150 °C. The experimental results of all SBDs indicate a linear reduction in the ideality factor (n) up to 2.537 and 2.059 with a slight increase in the effective barrier height (Ф_B) of 0.789 eV& 0.638 in dark and light conditions, respectively. The SBD fabricated at 550 °C recorded good performance, which will be suitable for thermal dependent electronic device applications.

本研究探索了一种金属绝缘体半导体肖特基势垒二极管 (SBD) 的制造，其中稀土金属氧化物 (Yb ₂ O ₃ ) 薄膜作为绝缘体，使用低成本喷射雾化器喷雾热解技术可大规模有效地开发。 （JNSP）。Yb ₂ O ₃薄膜在不同的衬底温度（350°C-550°C）下沉积，以确定其对材料特性的影响。使用各种表征技术研究结构、形态和光电特性。在这里，X射线衍射（XRD）分析揭示了Yb ₂ O _{3 的}单晶立方晶体结构薄膜。场发射扫描电子显微镜 (FESEM) 图像显示存在分布在 Yb ₂ O ₃薄膜的整个表面上的均匀分布的笼和球状结构。元素组成研究表明存在 Yb 和 O。通过紫外-可见光谱分析了 Yb ₂ O ₃薄膜的光学直接能带隙。在黑暗和光照条件下分析了 Al/Yb ₂ O _{3 的}电流 - 电压测量值/p-Si 结构的肖特基势垒二极管 (SBD)，在不同衬底温度下用界面层制造。此外，SBD 的功能在 30 °C 至 150 °C 的不同温度下进行了测试。所有 SBD 的实验结果表明，理想因子 ( n )线性降低至 2.537 和 2.059，有效势垒高度 (Ф _B ) 在黑暗和光照条件下分别略有增加0.789 eV 和 0.638。在 550 °C 下制造的 SBD 记录了良好的性能，这将适用于热相关的电子设备应用。