High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts,Advanced Electronic Materials

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High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-01-07 , DOI: 10.1002/aelm.202100954
Guangda Liang ₁ , Yiming Wang ₁ , Jiawei Zhang ₁ , Zakhar R. Kudrynskyi ₂ , Zakhar Kovalyuk ₃ , Amalia Patanè ₂ , Qian Xin _{1,

4} , Aimin Song _{1,

5}

Affiliation

2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering their study and exploitation. Here, field effect transistors (FETs) are designed and fabricated by encapsulation of the 2D semiconductor indium selenide (InSe) with alumina (Al₂O₃) and by self-aligned electrical contacts. The Al₂O₃-film is grown directly on InSe immediately after its exfoliation to provide a protecting capping layer during and after device fabrication. The InSe-FETs exhibit a high electron mobility of up to ≈10³ cm² V⁻¹ s⁻¹ at room temperature for a 4-nm-thick InSe layer, a low contact resistance (down to 0.18 kΩ) and a high, fast, and broad-band photoresponsivity. The photoresponsivity depends on the InSe-layer thickness and photon wavelength, reaching a value of up to 10⁸ A W⁻¹ in the visible spectral range, at least one order of magnitude larger than previously reported for similar photodetectors. The proposed fabrication is scalable and suitable for high-precision pattern definition. It could be extended to other 2D materials and multilayer structures where alumina could also provide effective screening of the electric field induced by polar molecules and/or charged impurities present near the surface of the 2D layer.

中文翻译：

具有自对准触点的二维半导体氧化铝封装的高性能光电晶体管

二维半导体是下一代电子和光电子的有希望的候选者。然而，它们在器件制造过程中暴露于空气和/或抗蚀剂会导致材料质量显着下降，从而阻碍它们的研究和开发。在这里，场效应晶体管 (FET) 是通过用氧化铝 (Al ₂ O ₃ ) 封装 2D 半导体硒化铟 (InSe) 和自对准电触点来设计和制造的。Al ₂ O ₃膜在剥离后立即直接在 InSe 上生长，以在器件制造期间和之后提供保护覆盖层。InSe-FET表现出高达≈10 ³ cm ² V ^{-1的高电子迁移率}对于 4 nm 厚的 InSe 层，在室温下为s ^{-1 ，具有低接触电阻（低至 0.18 kΩ）和高、快速和宽带的光响应性。}光响应性取决于 InSe 层厚度和光子波长，在可见光谱范围内达到高达 10 ⁸ AW ^-1的值，比先前报道的类似光电探测器至少大一个数量级。所提出的制造是可扩展的并且适用于高精度图案定义。它可以扩展到其他二维材料和多层结构，其中氧化铝还可以有效屏蔽由二维层表面附近存在的极性分子和/或带电杂质引起的电场。

更新日期：2022-01-07

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