Perfluoropropyl vinyl ether (PPVE) and perfluoroisopropyl vinyl ether (PIPVE) are used for plasma etching of SiO₂ contact holes. When etching is performed on blanket SiO₂ samples, the etch rates in the PPVE/Ar plasma are higher than those in the PIPVE/Ar plasma at all bias voltages. In contrast, when hole-pattern (100 nm in diameter) SiO₂ samples are etched, the etch rates of the SiO₂ hole in the PIPVE/Ar plasma are higher than those of the SiO₂ hole in the PPVE/Ar plasma. This can be attributed to excess production of CF ⁺₃ ions in PIPVE than in PPVE, and higher contribution of physical sputtering to plasma etching in PIPVE than in PPVE. The angular dependence of the SiO₂ etch rates examined using a Faraday cage reveals that the effect of physical sputtering on the SiO₂ etching is greater in the PIPVE/Ar plasma than in the PPVE/Ar plasma.

全氟丙基乙烯基醚 (PPVE) 和全氟异丙基乙烯基醚 (PIPVE) 用于等离子蚀刻 SiO ₂接触孔。当在覆盖 SiO ₂样品上进行蚀刻时，在所有偏置电压下，PPVE/Ar 等离子体中的蚀刻速率都高于 PIPVE/Ar 等离子体中的蚀刻速率。相反，当孔图案（在直径为100nm）的SiO ₂的样品进行蚀刻，在SiO的蚀刻速率₂的PIPVE / Ar等离子体中孔比在SiO的较高₂的PPVE / Ar等离子体中孔。这可归因于 CF ⁺ _{3 的}过量生产 PIPVE 中的离子比 PPVE 中的离子多，并且物理溅射对 PIPVE 中的等离子体蚀刻的贡献高于 PPVE。使用法拉第笼检查的 SiO ₂蚀刻速率的角度依赖性表明，物理溅射对 SiO ₂蚀刻的影响在 PIPVE/Ar 等离子体中比在 PPVE/Ar 等离子体中更大。