Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip,Optical and Quantum Electronics

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Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip
Optical and Quantum Electronics ( IF 3.3 ) Pub Date : 2022-01-04 , DOI: 10.1007/s11082-021-03478-7
Kai Liu ₁ , Yongqing Huang ₁ , Xiaofeng Duan ₁ , Xiaomin Ren ₁ , Qi Wang ₁ , Shiwei Cai ₁ , Xiaowen Dong ₁

Affiliation

In this paper, we analyzed the carrier transport effect on the high-speed modulation performance of the integrated optoelectronic transceiving chip (IOTC). It will be determined by the hole transporting time through the p-side cladding layer of the IOTC VCSEL unit's intrinsic SCH cavity. For IOTC with long cavity length (1λ), shorter hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 9.55 to 11.2 GHz. For IOTC with short cavity length (1/2λ), longer hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 8.75 to 11.1 GHz.

Graphic abstract

中文翻译：

载流子传输对集成光电收发芯片高速调制性能的影响

在本文中，我们分析了载流子传输对集成光电收发芯片（IOTC）高速调制性能的影响。这将由通过 IOTC VCSEL 单元的本征 SCH 腔的 p 侧覆层的空穴传输时间决定。对于腔长 (1λ) 长的 IOTC，空穴传输时间越短，动态性能越好，从 9.55 到 11.2 GHz 获得 3 dB 调制带宽。对于腔长（1/2λ）较短的IOTC，较长的空穴传输时间将导致更好的动态性能，在8.75至11.1 GHz范围内获得3 dB调制带宽。

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更新日期：2022-01-05

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