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Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon
Nano Letters ( IF 9.6 ) Pub Date : 2022-01-03 , DOI: 10.1021/acs.nanolett.1c04072
Guangchong Hu 1 , Gabriele G de Boo 1 , Brett Cameron Johnson 2, 3 , Jeffrey Colin McCallum 2 , Matthew J Sellars 4 , Chunming Yin 1, 5 , Sven Rogge 1
Affiliation  

The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er3+ ions in silicon nanotransistors. In this work, a time-resolved detection method is developed to investigate the resonant excitation and relaxation of a single Er3+ ion in silicon. The time-resolved detection is based on a long-lived current signal with a tunable reset and allows the measurement under stronger and shorter resonant excitation in comparison to time-averaged detection. Specifically, the short-pulse study gives an upper bound of 23.7 μs on the decay time of the 4I13/2 state of the Er3+ ion. The fast decay and the tunable reset allow faster repetition of the single-ion detection, which is attractive for implementing this method in large-scale quantum systems of single optical centers. The findings on the detection mechanism and dynamics also provide an important basis for applying this technique to detect other single optical centers in solids.

中文翻译:

硅中单个 Er3+ 离子的时间分辨光电离检测

由共振激发引起的电荷陷阱电离的检测能够对硅纳米晶体管中的单个 Er 3+离子进行光谱分析。在这项工作中,开发了一种时间分辨检测方法来研究硅中单个 Er 3+离子的共振激发和弛豫。时间分辨检测基于具有可调复位的长寿命电流信号,与时间平均检测相比,它允许在更强和更短的共振激励下进行测量。具体而言,短脉冲研究给出了 Er 3+的4 I 13/2状态的衰减时间的上限为 23.7 μs离子。快速衰减和可调复位允许更快地重复单离子检测,这对于在单光学中心的大规模量子系统中实施该方法具有吸引力。关于检测机理和动力学的研究结果也为应用该技术检测固体中的其他单个光学中心提供了重要基础。
更新日期:2022-01-12
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